发明授权
- 专利标题： Semiconductor with contact contacting diffusion adjacent gate electrode
- 专利标题（中）： 具有接触扩散相邻栅电极的半导体
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申请号： US10064316申请日： 2002-07-02
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公开(公告)号： US06940134B2公开(公告)日： 2005-09-06
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak
- 申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Hoffman, Warnick & D'Alessandro LLC
- 代理商 Anthony Canale
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/60 ; H01L21/768 ; H01L23/485 ; H01L29/76 ; H01L27/088
摘要：
Methods of forming a contact to a gate electrode or substrate despite misalignment of the contact opening due to lithographic techniques, and a semiconductor having such a contact. Silicide can be created on the gate and/or diffusion using the invention.