发明授权
- 专利标题： Semiconductor device and semiconductor memory device provided with internal current setting adjustment circuit
- 专利标题（中）： 具有内部电流设定调整电路的半导体装置和半导体存储装置
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申请号： US10694780申请日： 2003-10-29
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公开(公告)号： US06940777B2公开(公告)日： 2005-09-06
- 发明人: Tsukasa Ooishi
- 申请人： Tsukasa Ooishi
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Burns, Doane, Swecker & Mathis LLP
- 优先权： JP2002-318078 20021031; JP2003-276468 20030718
- 主分类号： G11C29/02
- IPC分类号： G11C29/02 ; G11C7/00
摘要：
An operating current is supplied from a power supply node to an internal circuit. In a test mode, current supply from a power supply to the power supply node is stopped by a current switch, and an externally adjustable test current is supplied to the power supply node. The test current is set in accordance with an acceptable value of a leakage current in the internal circuit. Evaluation is made as to whether the leakage current in the internal circuit is not greater than the acceptable value, in accordance with an output of a voltage comparison circuit detecting a voltage drop at the power supply node.
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