发明授权
- 专利标题： Complementary metal oxide semiconductor image sensor and method of manufacturing the same
- 专利标题（中）： 互补金属氧化物半导体图像传感器及其制造方法
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申请号： US10679333申请日： 2003-10-07
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公开(公告)号： US06943070B2公开(公告)日： 2005-09-13
- 发明人: Chien-Sheng Yang
- 申请人： Chien-Sheng Yang
- 申请人地址： TW Hsinchu
- 专利权人： AU Optronics Corp.
- 当前专利权人： AU Optronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Rabin & Berdo, P.C.
- 优先权： TW92112761A 20030509
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/146 ; H01L29/04 ; H01L31/00 ; H01L31/036 ; H01L31/0376 ; H01L31/20
摘要：
A complementary metal oxide semiconductor (CMOS) image sensor includes at least a non-single-crystal-silicone-base substrate, an opaque layer, a polysilicon layer, a source, a drain, a gate dielectric layer, a first transparent gate electrode, and a second gate transparent gate electrode. The opaque layer is formed on the non-single-crystal-silicone-base substrate, and the polysilicon layer, formed on the opaque layer, has a charge-generating region. The source and the drain are formed in the polysilicon layer, and a pre-channel region is formed between the source and the drain. The source is located between the pre-channel region and the charge-generating region. The gate dielectric layer is formed on the polysilicon layer, and the first and the second transparent gate electrodes, formed on the gate dielectric layer, are respectively located above the charge-generating region and the pre-channel region.
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