发明授权
US06943381B2 III-nitride light-emitting devices with improved high-current efficiency
有权
具有改善的高电流效率的III族氮化物发光器件
- 专利标题： III-nitride light-emitting devices with improved high-current efficiency
- 专利标题（中）： 具有改善的高电流效率的III族氮化物发光器件
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申请号： US10769590申请日： 2004-01-30
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公开(公告)号： US06943381B2公开(公告)日： 2005-09-13
- 发明人: Nathan F. Gardner , Christopher P. Kocot , Stephen A. Stockman
- 申请人： Nathan F. Gardner , Christopher P. Kocot , Stephen A. Stockman
- 申请人地址： US CA San Jose
- 专利权人： Lumileds Lighting U.S., LLC
- 当前专利权人： Lumileds Lighting U.S., LLC
- 当前专利权人地址： US CA San Jose
- 代理机构： Patent Law Group LLP
- 代理商 Rachel V. Leiterman
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/32
摘要：
A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), and a spacer layer interposing the light emitting layer and the InxAlyGa1-x-yN layer. The spacer layer may advantageously space the InxAlyGa1-x-yN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.
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