发明授权
US06943428B2 Semiconductor device including bipolar transistor and buried conductive region
失效
半导体器件包括双极晶体管和埋入导电区域
- 专利标题： Semiconductor device including bipolar transistor and buried conductive region
- 专利标题（中）： 半导体器件包括双极晶体管和埋入导电区域
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申请号： US10229138申请日： 2002-08-28
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公开(公告)号： US06943428B2公开(公告)日： 2005-09-13
- 发明人: Taisuke Furukawa , Yoshikazu Yoneda , Tatsuhiko Ikeda
- 申请人： Taisuke Furukawa , Yoshikazu Yoneda , Tatsuhiko Ikeda
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 优先权： JP2002-049750 20020226
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/8249 ; H01L27/06 ; H01L29/732 ; H01L29/737 ; H01L27/082 ; H01L27/102 ; H01L29/70 ; H01L31/11
摘要：
A semiconductor device and a method for manufacturing the device using a semiconductor substrate of a high resistance with improved Q value of a passive circuit element. Leakage current due to an impurity fluctuation, in the high resistance semiconductor substrate and noise resistance of an active element in the high resistance semiconductor substrate are improved. The semiconductor device includes a bipolar transistor at a main surface of and in the semiconductor substrate. The bipolar transistor includes a semiconductor layer of a first conductivity type at a bottom portion of the bipolar transistor and the semiconductor device includes a buried layer of a second conductivity type, located in the semiconductor substrate and facing the semiconductor layer of the first conductivity type.
公开/授权文献
- US20030160301A1 Semiconductor device 公开/授权日：2003-08-28
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