发明授权
- 专利标题: Semiconductor device having bridge-connected wiring structure
- 专利标题(中): 具有桥接布线结构的半导体器件
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申请号: US10468038申请日: 2002-03-29
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公开(公告)号: US06943445B2公开(公告)日: 2005-09-13
- 发明人: Shinji Shirakawa , Akira Mishima , Keiichi Mashino , Toshiyuki Innami , Shinichi Fujino , Hiromichi Anan , Yoshitaka Ochiai
- 申请人: Shinji Shirakawa , Akira Mishima , Keiichi Mashino , Toshiyuki Innami , Shinichi Fujino , Hiromichi Anan , Yoshitaka Ochiai
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Crowell & Moring LLP
- 优先权: JP2001-097950 20010330
- 国际申请: PCT/JP02/03182 WO 20020329
- 国际公布: WO02/08254 WO 20021017
- 主分类号: H01L23/538
- IPC分类号: H01L23/538 ; H01L25/07 ; H02M7/00 ; H01L23/34
摘要:
The present invention provides a semiconductor device which reduces an inductance of wiring for bridge-connecting semiconductor switches and realizes a reduction in size. Within the semiconductor device formed are two controllable bridge-connected semiconductor switches 13a and 13b, an output terminal, positive/negative polarity DC terminals 2 and 3, and an insulating substrate 15a in which conductor layers 12, 17 and 19 having a conductor section and in an inner layer for bridge-connecting the semiconductor switches to the DC terminals on a surface thereof and insulating layers 16 and 18 are alternately laminated. The surface and inner-layer conductor layers 12 and 17 which interpose the insulating layer 16 therebetween are electrically connected by a conductor 20 passing through the insulating layer 16 interposed between the conductor layers 12 and 17. A current path (dotted line) is so provided as to allow current flowing through a bridge circuit for mounting the two semiconductor switches on the insulating substrate to flow in opposite directions between the conductor layers 12 and 17 which interpose the insulating layer 16 therebetween.
公开/授权文献
- US20040113268A1 Semiconductor device 公开/授权日:2004-06-17
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