Invention Grant
US06944044B2 Method for reading out or in a status from or to a ferroelectrical transistor of a memory cell and memory matrix
失效
从存储器单元和存储器矩阵的铁电晶体管读出或处于状态的方法
- Patent Title: Method for reading out or in a status from or to a ferroelectrical transistor of a memory cell and memory matrix
- Patent Title (中): 从存储器单元和存储器矩阵的铁电晶体管读出或处于状态的方法
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Application No.: US10432441Application Date: 2001-12-19
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Publication No.: US06944044B2Publication Date: 2005-09-13
- Inventor: Holger Goebel , Heinz Hoenigschmid , Wolfgang Hönlein , Thomas Haneder
- Applicant: Holger Goebel , Heinz Hoenigschmid , Wolfgang Hönlein , Thomas Haneder
- Applicant Address: DE
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE
- Agency: Altera Law Group, LLC
- Agent Jeffrey R. Stone
- Priority: DE10064031 20001221
- International Application: PCT/DE01/04785 WO 20011219
- International Announcement: WO02/50842 WO 20020627
- Main IPC: G11C11/22
- IPC: G11C11/22 ; H01L21/8246 ; H01L21/8247 ; H01L27/105 ; H01L29/788 ; H01L29/792 ; G11C11/12
Abstract:
The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depletion region.
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