发明授权
- 专利标题： Magnetic random access memory and method of manufacturing the same
- 专利标题（中）： 磁性随机存取存储器及其制造方法
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申请号： US10671743申请日： 2003-09-29
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公开(公告)号： US06947314B2公开(公告)日： 2005-09-20
- 发明人: Hiroaki Yoda , Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao
- 申请人： Hiroaki Yoda , Hisanori Aikawa , Tomomasa Ueda , Tatsuya Kishi , Takeshi Kajiyama , Yoshiaki Asao
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2003-065055 20030311
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; G11C11/15 ; H01L21/8246 ; H01L43/08 ; G11C11/00
摘要：
A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 30° or less from the normal-line direction of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.
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