Invention Grant
- Patent Title: X-ray exposure apparatus and method, semiconductor manufacturing apparatus, and microstructure
- Patent Title (中): X射线曝光装置和方法,半导体制造装置和微结构
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Application No.: US09951456Application Date: 2001-09-14
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Publication No.: US06947519B2Publication Date: 2005-09-20
- Inventor: Kenji Itoga , Shunichi Uzawa , Yutaka Watanabe , Toyoki Kitayama
- Applicant: Kenji Itoga , Shunichi Uzawa , Yutaka Watanabe , Toyoki Kitayama
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Canon Kabushiki Kaisha,Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha,Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2000-281862 20000918
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F7/20 ; G21K1/06 ; G21K1/10 ; G21K5/02 ; G21K5/04 ; H01L21/027 ; H05H13/04 ; G21K5/00

Abstract:
An X-ray exposure apparatus extracts exposure X-rays from light called synchrotron radiation from a synchrotron radiation source by an optical path including an X-ray mirror and performs exposure using the extracted X-rays. The X-ray mirror contains a material having an absorption edge in at least one of a wavelength range of less than 0.45 nm and a wavelength range exceeding 0.7 nm, thereby implementing exposure using the X-ray in the range of 0.45 nm to 0.7 nm. The X-ray mirror contains at least one material selected from the group consisting of iron, cobalt, nickel, copper, manganese, chromium, and their alloys, nitrides, carbides, and borides.
Public/Granted literature
- US20020048341A1 X-ray exposure apparatus and method, semiconductor manufacturing apparatus, and microstructure Public/Granted day:2002-04-25
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