发明授权
- 专利标题: Semiconductor power component and a method of producing same
- 专利标题(中): 半导体功率元件及其制造方法
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申请号: US10450222申请日: 2002-03-26
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公开(公告)号: US06949439B2公开(公告)日: 2005-09-27
- 发明人: Peter Flohrs , Robert Plikat , Wolfgang Feiler
- 申请人: Peter Flohrs , Robert Plikat , Wolfgang Feiler
- 申请人地址: DE Stuttgart
- 专利权人: Robert Bosch GmbH
- 当前专利权人: Robert Bosch GmbH
- 当前专利权人地址: DE Stuttgart
- 代理机构: Kenyon & Kenyon
- 优先权: DE10117483 20010407
- 国际申请: PCT/DE02/01099 WO 20020326
- 国际公布: WO02/08255 WO 20021017
- 主分类号: H01L21/331
- IPC分类号: H01L21/331 ; H01L29/739 ; H01L21/8224
摘要:
A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 μm.