Invention Grant
- Patent Title: Method for forming interconnects on thin wafers
- Patent Title (中): 在薄晶片上形成互连的方法
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Application No.: US10604164Application Date: 2003-06-28
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Publication No.: US06951775B2Publication Date: 2005-10-04
- Inventor: Leonard J. Gardecki , James R. Palmer , Erik M. Probstfield , Adolf E. Wirsing
- Applicant: Leonard J. Gardecki , James R. Palmer , Erik M. Probstfield , Adolf E. Wirsing
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent William D. Sabo
- Main IPC: H01L21/60
- IPC: H01L21/60 ; H01L21/44 ; H01L29/12
Abstract:
A method of forming a semiconductor interconnect including, in the order recited: (a) providing a semiconductor wafer; (b) forming bonding pads in a terminal wiring level on the frontside of the wafer; (c) reducing the thickness of the wafer; (d) forming solder bumps on the bonding pads; and (e) dicing the wafer into bumped semiconductor chips.
Public/Granted literature
- US20040266159A1 METHOD FOR FORMING INTERCONNECTS ON THIN WAFERS Public/Granted day:2004-12-30
Information query
IPC分类:
