公开(公告)号：US20080113458A1

公开(公告)日：2008-05-15

申请号：US11559990

申请日：2006-11-15

Applicant: Timothy C. Krywanczyk ,  Timothy E. Neary ,  Erik M. Probstfield

Inventor： Timothy C. Krywanczyk ,  Timothy E. Neary ,  Erik M. Probstfield

IPC: H01L21/66 ,  G06F17/50

CPC classification number: H01L22/20

Abstract: A method for inspecting a semiconductor wafer fabricated for image sensing operation that has had a transparent protective tape layer applied to a front or active wafer surface. The method includes quantifying chip defects in the image sensor wafer that lie under the protective layer using automatic disposition equipment.

Abstract translation: 一种用于检查制造用于图像感测操作的半导体晶片的方法，其具有施加到前面或活动晶片表面的透明保护带层。 该方法包括使用自动配置设备量化位于保护层下方的图像传感器晶片中的芯片缺陷。

公开(公告)号：US20090013527A1

公开(公告)日：2009-01-15

申请号：US11775918

申请日：2007-07-11

Applicant: Timothy E. Neary ,  Erik M. Probstfield

Inventor： Timothy E. Neary ,  Erik M. Probstfield

IPC: H05K3/02 ,  H01R12/14

CPC classification number: B23K26/0624 ,  B23K26/361 ,  H01L24/11 ,  H01L2224/11003 ,  H01L2224/111 ,  Y10T29/49165

Abstract: A method for repairing molds for collapsible connections utilizing a femtosecond laser pulse length. Also provided is a laser source for implementing a multistep profile repair process for the removal of excess material in C4 molds by utilizing the femtosecond laser pulse lengths.

Abstract translation: 一种利用飞秒激光脉冲长度修复可折叠连接的模具的方法。 还提供了一种用于实现用于通过利用飞秒激光脉冲长度去除C4模具中的多余材料的多级廓形修复工艺的激光源。

公开(公告)号：US06951775B2

公开(公告)日：2005-10-04

申请号：US10604164

申请日：2003-06-28

Applicant: Leonard J. Gardecki ,  James R. Palmer ,  Erik M. Probstfield ,  Adolf E. Wirsing

Inventor： Leonard J. Gardecki ,  James R. Palmer ,  Erik M. Probstfield ,  Adolf E. Wirsing

IPC: H01L21/60 ,  H01L21/44 ,  H01L29/12

CPC classification number: B23K3/0623 ,  B23K2101/40 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/74 ,  H01L2221/68359 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05558 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11472 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13116 ,  H01L2224/16 ,  H01L2224/742 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method of forming a semiconductor interconnect including, in the order recited: (a) providing a semiconductor wafer; (b) forming bonding pads in a terminal wiring level on the frontside of the wafer; (c) reducing the thickness of the wafer; (d) forming solder bumps on the bonding pads; and (e) dicing the wafer into bumped semiconductor chips.

Abstract translation: 一种形成半导体互连的方法，包括：（a）提供半导体晶片; （b）在晶片的前侧的端子布线层中形成接合焊盘; （c）减小晶片的厚度; （d）在焊盘上形成焊料凸块; 和（e）将晶片切割成凸起的半导体芯片。

公开(公告)号：US07844099B2

公开(公告)日：2010-11-30

申请号：US11559990

申请日：2006-11-15

Applicant: Timothy C. Krywanczyk ,  Timothy E. Neary ,  Erik M. Probstfield

Inventor： Timothy C. Krywanczyk ,  Timothy E. Neary ,  Erik M. Probstfield

IPC: G06K9/00

CPC classification number: H01L22/20

Abstract: A method for inspecting a semiconductor wafer fabricated for image sensing operation that has had a transparent protective tape layer applied to a front or active wafer surface. The method includes quantifying chip defects in the image sensor wafer that lie under the protective layer using automatic disposition equipment.

Abstract translation: 一种用于检查制造用于图像感测操作的半导体晶片的方法，其具有施加到前面或活动晶片表面的透明保护带层。 该方法包括使用自动配置设备量化位于保护层下方的图像传感器晶片中的芯片缺陷。

公开(公告)号：US07288492B2

公开(公告)日：2007-10-30

申请号：US11184695

申请日：2005-07-19

Applicant: Leonard J. Gardecki ,  James R. Palmer ,  Erik M. Probstfield ,  Adolf E. Wirsing

Inventor： Leonard J. Gardecki ,  James R. Palmer ,  Erik M. Probstfield ,  Adolf E. Wirsing

IPC: H01L21/00 ,  C23C16/00

CPC classification number: B23K3/0623 ,  B23K2101/40 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/74 ,  H01L2221/68359 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05558 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11472 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13116 ,  H01L2224/16 ,  H01L2224/742 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method of forming a semiconductor interconnect including, in the order recited: (a) providing a semiconductor wafer; (b) forming bonding pads in a terminal wiring level on the frontside of the wafer; (c) reducing the thickness of the wafer; (d) forming solder bumps on the bonding pads; and (e) dicing the wafer into bumped semiconductor chips.

Abstract translation: 一种形成半导体互连的方法，包括：（a）提供半导体晶片; （b）在晶片的前侧的端子布线层中形成接合焊盘; （c）减小晶片的厚度; （d）在焊盘上形成焊料凸块; 和（e）将晶片切割成凸起的半导体芯片。