发明授权
- 专利标题： Method and apparatus for inspecting a semiconductor device
- 专利标题（中）： 用于检查半导体器件的方法和装置
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申请号： US09942213申请日： 2001-08-30
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公开(公告)号： US06952492B2公开(公告)日： 2005-10-04
- 发明人: Maki Tanaka , Masahiro Watanabe , Kenji Watanabe , Mari Nozoe , Hiroshi Miyai
- 申请人： Maki Tanaka , Masahiro Watanabe , Kenji Watanabe , Mari Nozoe , Hiroshi Miyai
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP
- 优先权： JP2001-185773 20010620
- 主分类号： G01R31/302
- IPC分类号： G01R31/302 ; G01N23/225 ; G01Q20/04 ; G01Q30/04 ; H01L21/027 ; H01L21/66 ; G06K9/00
摘要：
A method and apparatus for inspecting a semiconductor device in which failure occurence conditions on a whole wafer are estimated by calculating the statistic of potential contrasts in pattern sections from sampled images to implement higher throughput, and defective conditions of a process are detected at an early stage with the help of time series data of the estimate result.
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