发明授权
US06954372B2 Magnetic storage element, production method and driving method therefor, and memory array
失效
磁存储元件，其制造方法及其驱动方法以及存储器阵列
- 专利标题： Magnetic storage element, production method and driving method therefor, and memory array
- 专利标题（中）： 磁存储元件，其制造方法及其驱动方法以及存储器阵列
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申请号： US10250811申请日： 2002-01-18
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公开(公告)号： US06954372B2公开(公告)日： 2005-10-11
- 发明人: Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita
- 申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Mitsuo Satomi , Yasunari Sugita
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Co., Ltd.
- 当前专利权人： Matsushita Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Hamre, Schumann, Mueller & Larson, P.C.
- 优先权： JP2001-011245 20010119
- 国际申请： PCT/JP02/00327 WO 20020118
- 国际公布： WO02/05816 WO 20020725
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/16 ; H01F10/32 ; H01L21/8246 ; H01L27/22 ; H01L29/66 ; G11C11/00
摘要：
A magnetic memory device that includes a magnetoresistive element, a conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element, and at least one ferromagnetic member through which the magnetic flux passes. The ferromagnetic member forms a magnetic gap at a position where the magnetic flux passes through the magnetoresistive element. A length of the magnetoresistive element that is measured in a direction parallel to the magnetic gap is less than or equal to twice the length of the magnetic gap. A length of a path traced by the magnetic flux in the ferromagnetic member is less than or equal to 1.0 μm. The length of the path is also greater than or equal to five times the thickness of the ferromagnetic member and/or is greater than or equal to a length of the ferromagnetic member in the direction of the drawing of the conductive wire divided by five.
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