Invention Grant
- Patent Title: Method for joining a silicon plate to a second plate
- Patent Title (中): 将硅板接合到第二板的方法
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Application No.: US10433525Application Date: 2002-09-05
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Publication No.: US06955975B2Publication Date: 2005-10-18
- Inventor: Frank Reichenbach , Frank Fischer , Ralf Hausner , Frieder Haag , Eckhard Graf , Markus Lutz
- Applicant: Frank Reichenbach , Frank Fischer , Ralf Hausner , Frieder Haag , Eckhard Graf , Markus Lutz
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Kenyon & Kenyon
- Priority: DE10149140 20011005
- International Application: PCT/DE02/03282 WO 20020905
- International Announcement: WO03/03237 WO 20030417
- Main IPC: B29C65/16
- IPC: B29C65/16 ; B29C65/60 ; B81C1/00 ; H01L21/20 ; H01L21/58 ; H01L21/60 ; H01L21/762 ; H01L21/30 ; H01L21/46
Abstract:
A method for joining a silicon plate to a second plate, a laser beam being directed through the silicon plate at the second plate. In the process, the wavelength of the laser beam is selected in such a way that only a negligibly small amount of energy is absorbed in the silicon plate. A strongly absorbent material is hotmelted by the laser beam's energy and then produces a bond between the silicon plate and the second plate.
Public/Granted literature
- US20040082145A1 Method for joining a silicon plate to a second plate Public/Granted day:2004-04-29
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