发明授权
- 专利标题： High-speed current switch circuit
- 专利标题（中）： 高速电流开关电路
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申请号： US10168572申请日： 2001-12-21
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公开(公告)号： US06958631B2公开(公告)日： 2005-10-25
- 发明人: Yusuke Aiba , Masaki Ikeda , Takeshi Fujita , Hideaki Hirose , Akio Maruo
- 申请人： Yusuke Aiba , Masaki Ikeda , Takeshi Fujita , Hideaki Hirose , Akio Maruo
- 申请人地址： JP Tokyo
- 专利权人： Asahi Kasei Microsystems Co., Ltd.
- 当前专利权人： Asahi Kasei Microsystems Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, F arabow, Garrett & Dunner, L.L.P.
- 优先权： JP2000-388148 20001221
- 国际申请： PCT/JP01/11292 WO 20011221
- 国际公布： WO02/51009 WO 20020627
- 主分类号： H03K17/04
- IPC分类号： H03K17/04 ; G11B7/125 ; H03K17/0412 ; H03K17/687
摘要：
A high-speed current switch circuit of this invention has an n-type MOS transistor Q11 which switches and outputs a current, and a control circuit 11 which performs switching control of the MOS transistor Q11. In the control circuit 11, a source follower is formed by an N-type MOS transistor Q12 and a constant current source I2 which is a load on this transistor. A switch SW11 is connected to the MOS transistor Q12 to perform switching control of a current flowing through the MOS transistor Q12. The control circuit 11 includes a switch SW12 capable of grounding the gate of the MOS transistor 11. The source of the MOS transistor Q12 is connected to the gate of the MOS transistor Q11. Thus, even if a large current is caused to flow through the output transistor, the output transistor can be made to operate for switching at a high speed.
公开/授权文献
- US20020190779A1 High-speed current switch circuit 公开/授权日：2002-12-19
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