发明授权
- 专利标题: Semiconductor integrated circuit device and method of manufacturing the same
- 专利标题(中): 半导体集成电路器件及其制造方法
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申请号: US10199176申请日: 2002-07-22
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公开(公告)号: US06958932B2公开(公告)日: 2005-10-25
- 发明人: Keiji Hosotani , Yoshiaki Asao , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi , Yoshihisa Iwata
- 申请人: Keiji Hosotani , Yoshiaki Asao , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi , Yoshihisa Iwata
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2002-012640 20020122; JP2002-183983 20020625
- 主分类号: H01L27/105
- IPC分类号: H01L27/105 ; H01L21/768 ; H01L21/8246 ; H01L27/22 ; H01L43/08 ; G11C17/14
摘要:
A semiconductor integrated circuit device includes a cell transistor; a bit line provided above the cell transistor; a magnetoresistive element provided above the bit line, a first end portion of the magnetoresistive element being electrically connected to the bit line; an intracell local interconnection provided above the magnetoresistive element, the intracell local interconnection coupling one of source and drain regions of the cell transistor to a second end portion of the magnetoresistive element; and a write word line provided above the intracell local interconnection, a portion between the write word line and the intracell local interconnection being filled with an insulator alone.
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