发明授权
- 专利标题： Method of measuring the performance of a scanning electron microscope
- 专利标题（中）： 测量扫描电子显微镜性能的方法
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申请号： US10482200申请日： 2002-07-19
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公开(公告)号： US06960764B2公开(公告)日： 2005-11-01
- 发明人: Peter Dirksen , Rene Johan Gerrit Elfrink , Casparus Anthonius Henricus Juffermans
- 申请人： Peter Dirksen , Rene Johan Gerrit Elfrink , Casparus Anthonius Henricus Juffermans
- 申请人地址： NL Eindhoven
- 专利权人： Koninklijke Philips Electronics N.V.
- 当前专利权人： Koninklijke Philips Electronics N.V.
- 当前专利权人地址： NL Eindhoven
- 代理商 Peter Zawilski
- 优先权： EP01202856 20010726
- 国际申请： PCT/IB02/03025 WO 20020719
- 国际公布： WO03/010792 WO 20030206
- 主分类号： G01N23/225
- IPC分类号： G01N23/225 ; H01J37/04 ; H01J37/21 ; H01J37/22 ; H01J37/26 ; H01J37/28 ; H01L21/027 ; H01L21/66 ; G01N23/00 ; G21K7/00
摘要：
The performance of a scanning electron microscope (SEM) (10) is determined by scanning, with this SEM, porous silicon surface areas (PSF, PSC) each having a different average pore size, calculating the Fourier transform spectra (Fc) of the images of the surface areas and extrapolating the resolution (R) at a zero signal-to-noise ratio (SNR) from the width (W(1/e)), the signal amplitude (Sa) and the noise offset (NL) of the spectra. A test sample provided with the different surface areas is obtained by anodizing a silicon substrate (Su) at a constant electric current, while continuously decreasing the substrate area exposed to the etching electrolyte (El).
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