发明授权
- 专利标题: Erasing and programming an organic memory device and method of fabricating
- 专利标题(中): 擦除和编程有机存储器件及其制造方法
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申请号: US10436786申请日: 2003-05-13
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公开(公告)号: US06960783B2公开(公告)日: 2005-11-01
- 发明人: Zhida Lan , Colin Bill , Michael A. VanBuskirk
- 申请人: Zhida Lan , Colin Bill , Michael A. VanBuskirk
- 申请人地址: US CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Amin & Turocy, LLP
- 主分类号: G11C11/56
- IPC分类号: G11C11/56 ; G11C13/02 ; H01L35/24
摘要:
An organic memory cell made of two electrodes with a selectively conductive media between the two electrodes is disclosed. The selectively conductive media contains an organic layer and passive layer. The selectively conductive media is programmed by applying bias voltages that program a desired impedance state for a memory cell. The desired impedance state represents one or more bits of information and the memory cell does not require constant power or refresh cycles to maintain the desired impedance state. Furthermore, the selectively conductive media is read by applying a current and reading the impedance of the media in order to determine the impedance state of the memory cell. Methods of making the organic memory devices/cells, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.
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