发明授权
- 专利标题: Semiconductor device having multilevel copper wiring layers and its manufacture method
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申请号: US10350219申请日: 2003-01-24
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公开(公告)号: US06960833B2公开(公告)日: 2005-11-01
- 发明人: Satoshi Otsuka , Shun-ichi Fukuyama
- 申请人: Satoshi Otsuka , Shun-ichi Fukuyama
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Armstrong, Kratz, Quintos, Hanson & Brooks, LLP.
- 优先权: JP2002-168187 20020610
摘要:
To provide a semiconductor device having copper wiring layers and organic insulating resin layers with less separation and its manufacture method.A semiconductor device has: a semiconductor substrate formed with a number of semiconductor elements; a first interlayer insulating film formed above the semiconductor substrate and having a first wiring recess; a first copper wiring embedded in the first wiring recess; a second interlayer insulating film having a second wiring recess, the second interlayer insulating film including a copper diffusion preventing layer formed on the first copper wiring and the first interlayer insulating film, an oxide film formed on the copper diffusion preventing layer, and an organic insulating resin layer formed on the oxide film; and a second copper wiring embedded in the second wiring recess.
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