公开(公告)号：US06960833B2

公开(公告)日：2005-11-01

申请号：US10350219

申请日：2003-01-24

申请人： Satoshi Otsuka ,  Shun-ichi Fukuyama

发明人： Satoshi Otsuka ,  Shun-ichi Fukuyama

摘要： To provide a semiconductor device having copper wiring layers and organic insulating resin layers with less separation and its manufacture method.A semiconductor device has: a semiconductor substrate formed with a number of semiconductor elements; a first interlayer insulating film formed above the semiconductor substrate and having a first wiring recess; a first copper wiring embedded in the first wiring recess; a second interlayer insulating film having a second wiring recess, the second interlayer insulating film including a copper diffusion preventing layer formed on the first copper wiring and the first interlayer insulating film, an oxide film formed on the copper diffusion preventing layer, and an organic insulating resin layer formed on the oxide film; and a second copper wiring embedded in the second wiring recess.

公开(公告)号：US06707156B2

公开(公告)日：2004-03-16

申请号：US10352029

申请日：2003-01-28

申请人： Takashi Suzuki ,  Satoshi Otsuka ,  Tsutomu Hosoda ,  Hirofumi Watatani ,  Shun-ichi Fukuyama

发明人： Takashi Suzuki ,  Satoshi Otsuka ,  Tsutomu Hosoda ,  Hirofumi Watatani ,  Shun-ichi Fukuyama

IPC分类号： H01L2348

CPC分类号： H01L24/05 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/05042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00

摘要： A semiconductor device has: a semiconductor substrate; a number of semiconductor elements formed on the semiconductor substrate; a plurality of lower level wiring layers electrically connected to the semiconductor elements; a plurality of first insulating layers electrically separating the lower level wiring layers and having a first dielectric constant; a plurality of middle level wiring layers electrically connected to the lower level wiring layers; a plurality of second insulating layers electrically separating the middle level wiring layers and having a second dielectric constant larger than the first dielectric constant; a plurality of upper level wiring layers electrically connected to the middle level wiring layers; a plurality of third insulating layers electrically separating the upper level wiring layers and having a third dielectric constant larger than the second dielectric constant. A multilevel wiring structure is provided which has a high performance and a high reliability.

摘要翻译： 半导体器件具有：半导体衬底; 形成在半导体衬底上的多个半导体元件; 电连接到半导体元件的多个下层布线层; 多个第一绝缘层，电分离下层布线层并具有第一介电常数; 电连接到下层布线层的多个中间布线层; 多个第二绝缘层，电分离中间层布线层并具有大于第一介电常数的第二介电常数; 电连接到中间级布线层的多个上层布线层; 多个第三绝缘层，电分离上层布线层，并具有大于第二介电常数的第三介电常数。 提供了具有高性能和高可靠性的多层布线结构。

公开(公告)号：US08188602B2

公开(公告)日：2012-05-29

申请号：US10350219

申请日：2003-01-24

申请人： Satoshi Otsuka ,  Shun-ichi Fukuyama

发明人： Satoshi Otsuka ,  Shun-ichi Fukuyama

IPC分类号： H01L51/46

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76832 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide a semiconductor device having copper wiring layers and organic insulating resin layers with less separation and its manufacture method.A semiconductor device has: a semiconductor substrate formed with a number of semiconductor elements; a first interlayer insulating film formed above the semiconductor substrate and having a first wiring recess; a first copper wiring embedded in the first wiring recess; a second interlayer insulating film having a second wiring recess, the second interlayer insulating film including a copper diffusion preventing layer formed on the first copper wiring and the first interlayer insulating film, an oxide film formed on the copper diffusion preventing layer, and an organic insulating resin layer formed on the oxide film; and a second copper wiring embedded in the second wiring recess.

摘要翻译： 提供具有铜布线层的半导体器件和具有较小分离性的有机绝缘树脂层及其制造方法。 半导体器件具有：形成有多个半导体元件的半导体衬底; 形成在所述半导体衬底上并具有第一布线凹槽的第一层间绝缘膜; 嵌入在所述第一布线槽中的第一铜布线; 具有第二布线凹槽的第二层间绝缘膜，所述第二层间绝缘膜包括形成在所述第一铜布线和所述第一层间绝缘膜上的铜扩散防止层，形成在所述铜扩散防止层上的氧化膜，以及有机隔离层 在氧化膜上形成树脂层; 以及嵌入在第二布线凹槽中的第二铜布线。

公开(公告)号：US20070173054A1

公开(公告)日：2007-07-26

申请号：US11724219

申请日：2007-03-15

申请人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

发明人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

IPC分类号： H01L21/4763

CPC分类号： H01L21/76829 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.

公开(公告)号：US06958525B2

公开(公告)日：2005-10-25

申请号：US10448092

申请日：2003-05-30

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： B32B7/02 ,  B32B27/00 ,  C08K5/13 ,  C08L83/04 ,  C08L83/16 ,  C09D183/04 ,  C09D183/16 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58 ,  H01L23/48

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

摘要翻译： 低介电膜形成材料含有溶解在溶剂中的硅氧烷树脂和聚碳硅烷。 通过使用该溶液，形成含有与硅氧烷树脂结合的硅氧烷树脂和聚碳硅烷的低电介质膜。 提供了适用于层间绝缘膜材料的低介电膜材料。 还提供了具有低介电常数膜和高可靠性的半导体器件。

公开(公告)号：US06949830B2

公开(公告)日：2005-09-27

申请号：US10694826

申请日：2003-10-29

申请人： Tamotsu Owada ,  Shun-ichi Fukuyama ,  Hirofumi Watatani ,  Kengo Inoue ,  Atsuo Shimizu

发明人： Tamotsu Owada ,  Shun-ichi Fukuyama ,  Hirofumi Watatani ,  Kengo Inoue ,  Atsuo Shimizu

IPC分类号： C23C16/42 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76834 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76826 ,  H01L21/76832 ,  H01L23/5222 ,  H01L23/53228 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device including an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

摘要翻译： 一种半导体器件，包括具有覆盖铜布线的碳化硅层的下面的结构，并且通过使用作为源气体四甲基环四硅氧烷，二氧化碳气体和氧气的气相沉积在底层结构上生长碳氧化碳，所述氧气的流速 为二氧化碳气体流量的3％以下。 下面结构的碳化硅层的表面可以用含有氧的弱氧化气体的等离子体处理，并且分子量大于O 2 O 2的分子量以使表面更亲水。 膜剥离和层间绝缘层中的裂纹减少。

公开(公告)号：US06943431B2

公开(公告)日：2005-09-13

申请号：US10630716

申请日：2003-07-31

申请人： Shun-ichi Fukuyama ,  Tamotsu Owada ,  Hiroko Inoue ,  Ken Sugimoto

发明人： Shun-ichi Fukuyama ,  Tamotsu Owada ,  Hiroko Inoue ,  Ken Sugimoto

IPC分类号： H01L21/768 ,  H01L23/31 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/3171 ,  H01L21/76801 ,  H01L21/76807 ,  H01L23/3192 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/00

摘要： A semiconductor element is formed over a surface of a semiconductor substrate. A first insulating film is formed over the surface of the semiconductor substrate, the first insulating film covering the semiconductor element. A second insulating film is formed over the first insulating film, the second insulating film having a dielectric constant lower than that of the first insulating film. A first wiring pattern is formed over the second insulating film. A conductive connection member buried in the second and first insulating films electrically interconnects the first wiring pattern and semiconductor element.

摘要翻译： 半导体元件形成在半导体衬底的表面上。 第一绝缘膜形成在半导体衬底的表面上，第一绝缘膜覆盖半导体元件。 在第一绝缘膜上形成第二绝缘膜，第二绝缘膜的介电常数低于第一绝缘膜的介电常数。 在第二绝缘膜上形成第一布线图案。 埋在第二和第一绝缘膜中的导电连接构件将第一布线图案和半导体元件电连接。

公开(公告)号：US4657843A

公开(公告)日：1987-04-14

申请号：US835741

申请日：1986-03-03

申请人： Shun-ichi Fukuyama ,  Yasuhiro Yoneda ,  Masashi Miyagawa ,  Kota Nishii

发明人： Shun-ichi Fukuyama ,  Yasuhiro Yoneda ,  Masashi Miyagawa ,  Kota Nishii

IPC分类号： G03F7/004 ,  G03F7/075 ,  G03C5/16 ,  G03F7/26

CPC分类号： G03F7/0757 ,  Y10S438/948

摘要： A high-energy radiation-sensitive pattern-forming resist material consisting of polysilsesquioxane having no hydroxyl group in its molecule. The pattern-forming material of this invention has an improved sensitivity to high-energy radiation exposure, a high resistance to dry etching, a high resolution capability, and an improved thermal stability.

摘要翻译： 由分子中不含羟基的聚倍半硅氧烷构成的高能辐射敏感图案形成抗蚀剂材料。 本发明的图形形成材料对高能辐射曝光具有改进的敏感性，高耐干腐蚀性，高分辨能力和改善的热稳定性。

公开(公告)号：US20120252227A1

公开(公告)日：2012-10-04

申请号：US13493244

申请日：2012-06-11

申请人： Tamotsu Owada ,  Shun-ichi Fukuyama ,  Hirofumi Watatani ,  Kengo Inoue ,  Atsuo Shimizu

发明人： Tamotsu Owada ,  Shun-ichi Fukuyama ,  Hirofumi Watatani ,  Kengo Inoue ,  Atsuo Shimizu

IPC分类号： H01L21/31

CPC分类号： H01L21/02227 ,  C23C16/30 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

摘要： A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：制备具有覆盖铜布线的碳化硅层的下面的结构，并且通过气相沉积作为原料气体四甲基环四硅氧烷，二氧化碳气体和氧气生长碳氢化合物 所述氧气的流量为二氧化碳气体流量的3％以下。 下面结构的碳化硅层的表面可以用含有氧的弱氧化气体的等离子体处理，其分子量大于O 2的分子量，使表面更亲水。 膜剥离和层间绝缘层中的裂纹减少。

公开(公告)号：US07642185B2

公开(公告)日：2010-01-05

申请号：US11724219

申请日：2007-03-15

申请人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

发明人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

IPC分类号： H01L21/4763

CPC分类号： H01L21/76829 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.

摘要翻译： 在基板上形成由碳化硅制成的第一膜。 第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。 第一膜的表面与化学品接触，使表面亲水。 在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。 当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。