发明授权
US06962882B2 Method of fabricating a semiconductor device having a nanoparticle porous oxide film
失效
制造具有纳米颗粒多孔氧化物膜的半导体器件的方法
- 专利标题： Method of fabricating a semiconductor device having a nanoparticle porous oxide film
- 专利标题（中）： 制造具有纳米颗粒多孔氧化物膜的半导体器件的方法
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申请号： US10170325申请日： 2002-06-12
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公开(公告)号： US06962882B2公开(公告)日： 2005-11-08
- 发明人: Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
- 申请人： Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
- 申请人地址： JP Yokohama
- 专利权人： Semiconductor Technology Academic Research Center
- 当前专利权人： Semiconductor Technology Academic Research Center
- 当前专利权人地址： JP Yokohama
- 代理机构： Christensen O'Connor Johnson Kindness PLLC
- 优先权： JP2001-191783 20010625
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/31 ; H01L21/3205 ; H01L21/469 ; H01L21/768
摘要：
While a crucible containing an Si material and a substrate to be processed are set in a chamber, Ar gas is supplied into the chamber and the Si material is evaporated by heating, thereby forming a nanoparticle thin film of Si on the substrate. This substrate is then annealed in an oxygen atmosphere to oxidize Si, forming a nanoparticle oxide thin film consisting of SiO2.
公开/授权文献
- US20020197889A1 Semiconductor device fabrication method 公开/授权日：2002-12-26
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