发明授权
US06963126B2 Semiconductor device with under-fill material below a surface of a semiconductor chip
有权
具有在半导体芯片的表面下方的填充不足的材料的半导体器件
- 专利标题： Semiconductor device with under-fill material below a surface of a semiconductor chip
- 专利标题（中）： 具有在半导体芯片的表面下方的填充不足的材料的半导体器件
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申请号： US09809923申请日： 2001-03-16
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公开(公告)号： US06963126B2公开(公告)日： 2005-11-08
- 发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Yukio Okada , Yusuke Igarashi , Eiju Maehara , Kouji Takahashi
- 申请人： Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Yukio Okada , Yusuke Igarashi , Eiju Maehara , Kouji Takahashi
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2000-269464 20000906
- 主分类号： H01L23/28
- IPC分类号： H01L23/28 ; H01L21/48 ; H01L21/56 ; H01L21/60 ; H01L23/12 ; H01L23/29 ; H01L23/31 ; H01L23/36 ; H01L23/433 ; H01L23/22 ; H01L23/24
摘要：
AS conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconductor device superior in radiation is provided.