发明授权
US06964892B2 N-channel metal oxide semiconductor (NMOS) driver circuit and method of making same
失效
N沟道金属氧化物半导体（NMOS）驱动电路及其制造方法
- 专利标题： N-channel metal oxide semiconductor (NMOS) driver circuit and method of making same
- 专利标题（中）： N沟道金属氧化物半导体（NMOS）驱动电路及其制造方法
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申请号： US10155731申请日： 2002-05-28
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公开(公告)号： US06964892B2公开(公告)日： 2005-11-15
- 发明人: Lawrence A. Clevenger , Rama Divakaruni , Louis Lu-Chen Hsu , Yujun Li
- 申请人： Lawrence A. Clevenger , Rama Divakaruni , Louis Lu-Chen Hsu , Yujun Li
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： McGinn & Gibb, PLLC
- 代理商 Wan Yee Cheung, Esq.
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L21/225 ; H01L21/336 ; H01L21/768 ; H01L21/8234 ; H01L21/8242 ; H01L27/088 ; H01L27/108 ; H01L21/8238 ; H01L21/00 ; H01L21/84
摘要：
An N-channel metal oxide semiconductor (NMOS) driver circuit (and method for making the same), includes a boost gate stack formed on a substrate and having a source and drain formed by a low concentration implantation, and an N-driver coupled to the boost gate stack.
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