发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US09716843申请日： 2000-11-17
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公开(公告)号： US06969623B1公开(公告)日： 2005-11-29
- 发明人: Kouichi Ikeda , Takeshi Ikeda
- 申请人： Kouichi Ikeda , Takeshi Ikeda
- 申请人地址： JP Niigata
- 专利权人： Niigata Seimitsu Co., Ltd.
- 当前专利权人： Niigata Seimitsu Co., Ltd.
- 当前专利权人地址： JP Niigata
- 代理机构： Dellett & Walters
- 优先权： JP10-153818 19980519; JP10-153819 19980519
- 主分类号： G11C29/00
- IPC分类号： G11C29/00 ; H01L21/66 ; H01L21/78 ; H01L31/26 ; H01L21/44
摘要：
A semiconductor device and a method for manufacturing the semiconductor device mountable with high density, which includes a simplified process but is capable of reducing a defect rate. A plurality of identical memory chips are formed on a semiconductor wafer, and a go/no-go test is conducted on all the memory chips. The semiconductor wafer is cut and divided into pieces that each consists of one, or two, or four good memory chips, and they are mounted on a substrate to form a memory module.