Invention Grant
- Patent Title: Memory device having isolation trenches with different depths and the method for making the same
- Patent Title (中): 具有不同深度的隔离沟槽的存储器件及其制造方法
-
Application No.: US10353177Application Date: 2003-01-28
-
Publication No.: US06969686B2Publication Date: 2005-11-29
- Inventor: Wen-Kuei Hsieh , Chih-Mu Huang , James Juen Hsu
- Applicant: Wen-Kuei Hsieh , Chih-Mu Huang , James Juen Hsu
- Applicant Address: TW Hsinchu
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Jiang Chyun IP Office
- Priority: TW91132748A 20021107
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/762 ; H01L21/8239 ; H01L27/105 ; H01L21/302
Abstract:
A method for manufacturing a memory device utilizes multi-etching processes to respectively construct isolation trenches in a memory substrate that has a memory array area and a peripheral circuit region, wherein the depth of the trenches in the peripheral circuit region is deeper into the memory substrate than the depth of the trenches in the memory array area. Therefore, possible current leakage caused from the high operating voltage is effectively mitigated, and the performance of the memory device is increased.
Public/Granted literature
- US20040092115A1 Memory device having isolation trenches with different depths and the method for making the same Public/Granted day:2004-05-13
Information query
IPC分类:
