发明授权
- 专利标题: Embedded microelectronic capacitor incorporating ground shielding layers and method for fabrication
- 专利标题(中): 具有接地屏蔽层的嵌入式微电子电容器及其制造方法
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申请号: US10713804申请日: 2003-11-14
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公开(公告)号: US06969912B2公开(公告)日: 2005-11-29
- 发明人: Uei-Ming Jow , Pei-Shen Wei , Ching-Liang Weng , Chun-Kun Wu , Chang-Sheng Chen , Ying-Jiunn Lai
- 申请人: Uei-Ming Jow , Pei-Shen Wei , Ching-Liang Weng , Chun-Kun Wu , Chang-Sheng Chen , Ying-Jiunn Lai
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 代理机构: Akin Gump Strauss Hauer & Feld, LLP
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L23/053 ; H01L23/48 ; H05K1/02 ; H05K1/16 ; H05K3/46
摘要:
An embedded microelectronic capacitor incorporating at least one ground shielding layer is provided which includes an upper ground shielding layer that has an aperture therethrough; an electrode plate positioned spaced-apart from the upper ground shielding layer that has a via extending upwardly away from the electrode plate through the aperture in the upper ground shielding layer providing electrical communication to the electrode plate without shorting to the upper ground shielding layer; a middle ground shielding layer positioned in the same plane of the electrode plate, surrounding while spaced-apart from the electrode plate at a predetermined distance; a lower ground shielding layer positioned spaced-apart from the electrode plate in an opposing relationship to the upper ground shielding layer; and a dielectric material embedding the upper ground shielding layer; the middle ground shielding layer and the lower ground shielding layer.
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