发明授权
US06972440B2 Enhanced T-gate structure for modulation doped field effect transistors
有权
用于调制掺杂场效应晶体管的增强型T栅极结构
- 专利标题: Enhanced T-gate structure for modulation doped field effect transistors
- 专利标题(中): 用于调制掺杂场效应晶体管的增强型T栅极结构
-
申请号: US10750697申请日: 2004-01-02
-
公开(公告)号: US06972440B2公开(公告)日: 2005-12-06
- 发明人: Dinkar Singh , Katherine Lynn Saenger , Vishnubhai V. Patel , Alfred Grill , Steven John Koester
- 申请人: Dinkar Singh , Katherine Lynn Saenger , Vishnubhai V. Patel , Alfred Grill , Steven John Koester
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 George Sai-Halasz; Robert M. Trepp
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; H01L29/423 ; H01L31/0328
摘要:
A structure and a method are disclosed of an enhanced T-gate for modulation doped field effect transistors (MODFETs). The enhanced T-gate has insulator spacer layers sandwiching the neck portion of the T-gate. The spacer layers are thinner than the T-bar portion overhang. The insulating layer provides mechanical support and protects the vulnerable neck portion of the T-gate from chemical attack during subsequent device processing, making the T-gate structure highly scalable and improving yield. The use of thin conformal low dielectric constant insulating layers ensures a low parasitic gate capacitance, and reduces the risk of shorting gate and source metallurgy when source-to-gate spacings are reduced to smaller dimensions.