Invention Grant
- Patent Title: Measuring method of illuminance unevenness of exposure apparatus, correcting method of illuminance unevenness, manufacturing method of semiconductor device, and exposure apparatus
- Patent Title (中): 曝光装置的照度不均匀的测量方法,照度不均匀的校正方法,半导体装置的制造方法和曝光装置
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Application No.: US10131083Application Date: 2002-04-25
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Publication No.: US06972836B2Publication Date: 2005-12-06
- Inventor: Kazuya Sato , Soichi Inoue , Satoshi Tanaka
- Applicant: Kazuya Sato , Soichi Inoue , Satoshi Tanaka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2001-133298 20010427
- Main IPC: G01J1/26
- IPC: G01J1/26 ; G03F1/00 ; G03F1/70 ; G03F7/20 ; H01L21/027 ; G01J1/00

Abstract:
There is disclosed a measuring method of illuminance unevenness of an exposure apparatus in which the illuminance unevenness resulting from a projection optical system, to project the light passed through the photomask onto the finite area on the photosensitive substrate via the projection optical system and to expose the photomask to the light, the method comprising calculating an average value of transmittance of the projection optical system of each path of the light emitted from one point of the photomask and reaching an imaging point for each of a plurality of imaging points in the finite area on the photosensitive substrate, and calculating the illuminance unevenness in the finite area on the photosensitive substrate from the average value of the transmittance obtained for each imaging point.
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