发明授权
- 专利标题: Semiconductor pressure sensor having diaphragm
- 专利标题(中): 具有隔膜的半导体压力传感器
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申请号: US10785980申请日: 2004-02-26
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公开(公告)号: US06973836B2公开(公告)日: 2005-12-13
- 发明人: Takashi Katsumata , Inao Toyoda , Hiroaki Tanaka
- 申请人: Takashi Katsumata , Inao Toyoda , Hiroaki Tanaka
- 申请人地址: JP Kariya
- 专利权人: Denso Corporation
- 当前专利权人: Denso Corporation
- 当前专利权人地址: JP Kariya
- 代理机构: Posz Law Group, PLC
- 优先权: JP2003-061584 20030307
- 主分类号: G01L9/04
- IPC分类号: G01L9/04 ; B81B3/00 ; G01L1/22 ; G01L9/00 ; G01L19/04 ; H01L29/84
摘要:
A semiconductor pressure sensor includes a semiconductor substrate having a diaphragm for receiving pressure and a bridge circuit for detecting a distortion of the diaphragm corresponding to the pressure. The bridge circuit includes a pair of first gauge resistors and a pair of second gauge resistors. The first gauge resistors are disposed on a center of the diaphragm, and the second gauge resistors are disposed on a periphery of the diaphragm. Each first gauge resistor has a first resistance, which is larger than a second resistance of each second gauge resistor. The TNO property of the sensor is improved, so that the sensor has high detection accuracy.
公开/授权文献
- US20040173027A1 Semiconductor pressure sensor having diaphragm 公开/授权日:2004-09-09