发明授权
US06974771B2 Methods and apparatus for forming barrier layers in high aspect ratio vias
有权
在高纵横比通孔中形成阻挡层的方法和装置
- 专利标题： Methods and apparatus for forming barrier layers in high aspect ratio vias
- 专利标题（中）： 在高纵横比通孔中形成阻挡层的方法和装置
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申请号： US10894774申请日： 2004-07-20
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公开(公告)号： US06974771B2公开(公告)日： 2005-12-13
- 发明人: Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
- 申请人： Fusen Chen , Ling Chen , Walter Benjamin Glenn , Praburam Gopalraja , Jianming Fu
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Dugan & Dugan
- 主分类号： C23C14/02
- IPC分类号： C23C14/02 ; C23C14/04 ; C23C16/34 ; C23C16/44 ; C23C16/455 ; H01L21/285 ; H01L21/44 ; H01L21/768 ; C23C16/00 ; H01L21/302 ; H01L21/461 ; H01L21/4763
摘要：
In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.
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