发明授权
- 专利标题： Flash memory having memory section and peripheral circuit section
- 专利标题（中）： 具有存储器部分和外围电路部分的闪存
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申请号： US10685599申请日： 2003-10-16
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公开(公告)号： US06977409B2公开(公告)日： 2005-12-20
- 发明人: Riichiro Shirota , Kikuko Sugimae , Masayuki Ichige , Atsuhiro Sato , Hiroaki Hazama
- 申请人： Riichiro Shirota , Kikuko Sugimae , Masayuki Ichige , Atsuhiro Sato , Hiroaki Hazama
- 申请人地址： JP Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Kawasaki
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2000-301308 20000929
- 主分类号： H01L21/822
- IPC分类号： H01L21/822 ; H01L21/8247 ; H01L27/04 ; H01L27/10 ; H01L27/105 ; H01L27/115 ; H01L29/788 ; H01L29/792
摘要：
A semiconductor memory device includes a semiconductor substrate, an element isolation region formed in the semiconductor substrate and including a thick element isolating insulation film, for isolating an element region, a first gate electrode provided on the element region in the semiconductor substrate in self-alignment with the element isolation region, a second gate electrode provided on the first gate electrode with an insulation film interposed therebetween, and a resistance element formed on the element isolation region, the resistance element and the second gate electrode being formed of the same conductive film.
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