发明授权
- 专利标题： Semiconductor chip stack structure
- 专利标题（中）： 半导体芯片堆栈结构
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申请号： US10326775申请日： 2002-12-20
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公开(公告)号： US06977439B2公开(公告)日： 2005-12-20
- 发明人: In-Ku Kang , Sang-Ho Ahn , Sun-Mo Yang
- 申请人： In-Ku Kang , Sang-Ho Ahn , Sun-Mo Yang
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Marger Johnson & McCollom, P.C.
- 优先权： KR2002-15329 20020321
- 主分类号： H01L23/12
- IPC分类号： H01L23/12 ; H01L25/065 ; H01L23/48 ; H01L23/02
摘要：
Semiconductor chip stack structure and method are provided. A first chip has a first metal bump formed on a first electrode pad. The first chip is attached to and electrically connected to a substrate. The electrical connection is made by a bump reverse bonding method in which one end of a bonding wire is ball-bonded to the substrate and the other end is stitch-bonded to the metal bump. The second chip is stacked on the first chip. The bonding wire is substantially parallel with a top surface of the first chip. Accordingly, the chip stack structure and method minimize a space between the first chip and the second chip, thereby reducing the total height of semiconductor chip stack.
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