There is disclosed a stencil mask for ion implantation used in an ion implantation process of semiconductor device fabrication comprising at least a base material portion and a stencil portion, wherein the stencil portion has a diamond layer. Thereby, there can be provided a stencil mask for ion implantation used in an ion implantation process of semiconductor device fabrication, which has high resistance to ion irradiation, and which can stably perform ion implantation of high precision and high purity for long time.