Power transmitting device
    1.
    发明授权
    Power transmitting device 有权
    发电装置

    公开(公告)号:US08714332B2

    公开(公告)日:2014-05-06

    申请号:US13442136

    申请日:2012-04-09

    Abstract: A main shaft has a shaft cylindrical portion extending from an outer periphery of a large-diameter portion. A drum has a drum cylindrical portion extending from an outer periphery of a drum plate portion. An axial forward end of the drum cylindrical portion is arranged in an inside of the shaft cylindrical portion. A frictional engagement unit of a clutch is provided in an inside of the shaft cylindrical portion. A motor generator has a rotor, which is firmly fitted to outer walls of the large-diameter portion and the shaft cylindrical portion and rotatable relative to a stator. A working-oil supply passage is formed in an inside of an input shaft.

    Abstract translation: 主轴具有从大直径部的外周延伸的轴筒部。 滚筒具有从鼓板部分的外周延伸的滚筒圆柱形部分。 鼓圆筒部的轴向前端配置在轴圆筒部的内侧。 离合器的摩擦接合单元设置在轴圆筒部的内侧。 电动发电机具有转子,该转子牢固地配合到大直径部分的外壁和轴圆筒部分上并相对于定子可旋转。 工作油供给通道形成在输入轴的内侧。

    SUBSTRATE-INCORPORATED CAPACITOR, CAPACITOR-INCORPORATING SUBSTRATE PROVIDED WITH THE SAME, AND METHOD FOR MANUFACTURING SUBSTRATE-INCORPORATED CAPACITOR
    2.
    发明申请
    SUBSTRATE-INCORPORATED CAPACITOR, CAPACITOR-INCORPORATING SUBSTRATE PROVIDED WITH THE SAME, AND METHOD FOR MANUFACTURING SUBSTRATE-INCORPORATED CAPACITOR 审中-公开
    基板合并电容器,与其同时加载的基板以及用于制造基板并联电容器的方法

    公开(公告)号:US20130120904A1

    公开(公告)日:2013-05-16

    申请号:US13812403

    申请日:2011-07-07

    Abstract: A substrate-incorporated capacitor includes a first electrode extending in a predetermined direction, a dielectric layer arranged on part of the first electrode, a second electrode arranged on the dielectric layer and facing the first electrode through the dielectric layer, and an electrode layer arranged on the first electrode surrounding the dielectric layer and connected to the first electrode. Part of the electrode layer is arranged on an end of the dielectric layer and is spaced apart from the second electrode in the predetermined direction, and the part of the electrode layer faces the first electrode through the dielectric layer.

    Abstract translation: 基板合并电容器包括沿预定方向延伸的第一电极,布置在第一电极的一部分上的电介质层,布置在电介质层上并通过电介质层面对第一电极的第二电极和布置在电介质层上的电极层 所述第一电极围绕所述电介质层并且连接到所述第一电极。 电极层的一部分布置在电介质层的一端,并且在预定方向上与第二电极间隔开,并且电极层的一部分通过电介质层面向第一电极。

    STACKED STRUCTURE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    STACKED STRUCTURE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    堆叠结构及其制造方法

    公开(公告)号:US20120085573A1

    公开(公告)日:2012-04-12

    申请号:US13377882

    申请日:2010-05-07

    Abstract: A problem to be solved is to suppress deterioration of insulating properties in a stacked structure with a dielectric film formed by powder spraying coating process, and in a method of manufacturing the stacked structure. In a stacked structure according to the present invention, a dielectric layer 3 is provided between a first conductive layer 1 and a second conductive layer 2. The dielectric layer 3 includes an underlying layer 31 formed by applying a dispersion solution containing dielectric particles onto the first conductive layer 1, and a dielectric film 32 formed on the underlying layer 31 by powder spraying coating process. A method of manufacturing the stacked structure according to the present invention includes a dielectric layer forming step of forming the dielectric layer 3 on the first conductive layer 1, and a conductive layer forming step of forming the second conductive layer 2 on the dielectric layer 3. The dielectric layer forming step includes an underlying layer forming step of forming the underlying layer 31 by applying a dispersion solution containing dielectric particles onto the first conductive layer 1, and a dielectric film forming step of forming the dielectric film 32 on the underlying layer 31 by powder spraying coating process.

    Abstract translation: 要解决的问题是通过用粉末喷涂法形成的电介质膜来抑制层叠结构中的绝缘性的劣化,以及制造层叠结构的方法。 在根据本发明的堆叠结构中,电介质层3设置在第一导电层1和第二导电层2之间。电介质层3包括通过将包含电介质颗粒的分散溶液施加到第一导电层1上而形成的下层31 导电层1和通过粉末喷涂法在下层31上形成的电介质膜32。 根据本发明的制造叠层结构的方法包括在第一导电层1上形成电介质层3的介电层形成步骤和在电介质层3上形成第二导电层2的导电层形成步骤。 电介质层形成步骤包括通过将含有电介质颗粒的分散溶液施加到第一导电层1上形成下层31的下层形成步骤,以及电介质膜形成步骤,通过在第一导电层1上形成介电膜32在下层31上 粉末喷涂工艺。

    SINGLE-CRYSTAL DIAMOND GROWTH BASE MATERIAL AND METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND SUBSTRATE
    4.
    发明申请
    SINGLE-CRYSTAL DIAMOND GROWTH BASE MATERIAL AND METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND SUBSTRATE 有权
    单晶金刚石生长基材和制造单晶金刚石基板的方法

    公开(公告)号:US20110315074A1

    公开(公告)日:2011-12-29

    申请号:US13159074

    申请日:2011-06-13

    Abstract: An object is to provide a single-crystal diamond growth base material and a method for manufacturing a single-crystal diamond substrate that enable growing single-crystal diamond having a large area and excellent crystallinity and inexpensively manufacturing a high-quality single-crystal diamond substrate.A single-crystal diamond growth base material on which single-crystal diamond is grown comprises at least: a base substrate consisting of a material having a linear expansion coefficient smaller than that of MgO and not smaller than 0.5×10−6/K; a single-crystal MgO layer formed on a face of the base substrate where the single-crystal diamond is grown by a bonding method; and a film constituted of any one of an iridium film, a rhodium film, and a platinum film heteroepitaxially grown on the single-crystal MgO layer.

    Abstract translation: 本发明的目的是提供一种单晶金刚石生长基材和用于制造单晶金刚石基底的方法,其使得能够生长具有大面积和优异结晶度的单晶金刚石,并且廉价地制造高品质单晶金刚石基底 。 生长单晶金刚石的单晶金刚石生长基材至少包括:线状膨胀系数小于MgO且不小于0.5×10-6 / K的材料构成的基底; 通过接合方法在单晶金刚石生长的基底上形成的单晶MgO层; 以及由在单晶MgO层上异质外延生长的铱膜,铑膜和铂膜中的任一种构成的膜。

    Multilayer substrate, method for producing a multilayer substrate, and device
    5.
    发明授权
    Multilayer substrate, method for producing a multilayer substrate, and device 有权
    多层基板,多层基板的制造方法以及装置

    公开(公告)号:US07514146B2

    公开(公告)日:2009-04-07

    申请号:US11368617

    申请日:2006-03-07

    Abstract: There is provided a multilayer substrate comprising, at least, a single crystal MgO substrate, an iridium (Ir) film heteroepitaxially grown on the MgO substrate, a diamond film vapor-deposited on the Ir film, wherein crystallinity of the Ir film is that a full width at half maximum (FWHM) of a diffracted intensity peak in 2 θ=46.5° or 2θ=47.3° attributed to Ir (200) analyzed by X-ray diffraction method with a wavelength of λ=1.54 Å is 0.40° or less. Thereby, there is provided a multilayer substrate that is delamination-proof at the respective interfaces between the MgO substrate and the Ir film and between the Ir film and the diamond film, and, particularly, that has a single crystal diamond film of a large area as a continuous film.

    Abstract translation: 提供了至少包括单晶MgO基板,在MgO基板上异质外延生长的铱(Ir)膜的多层基板,在Ir膜上气相沉积的金刚石膜,其中Ir膜的结晶度为 归因于通过λ=1.54的X射线衍射法分析的Ir(200)的2θ= 46.5°或2θ= 47.3°的衍射强度峰的半峰全宽(FWHM)为0.40°以下 。 由此,提供了在MgO基板和Ir膜之间以及Ir膜和金刚石膜之间的界面处具有防分层性的多层基板,特别是具有大面积的单晶金刚石膜 作为连续片。

    Method for producing substrate for single crystal diamond growth
    6.
    发明申请
    Method for producing substrate for single crystal diamond growth 有权
    单晶金刚石生长用基板的制造方法

    公开(公告)号:US20070209578A1

    公开(公告)日:2007-09-13

    申请号:US11713036

    申请日:2007-03-02

    Inventor: Hitoshi Noguchi

    Abstract: There is disclosed a method for producing a substrate for single crystal diamond growth, comprising at least a step of preliminarily subjecting a substrate before single crystal diamond growth to a bias treatment for forming a diamond nucleus thereon by a direct-current discharge in which an electrode in a substrate side is a cathode, and wherein in the treatment, at least, a temperature of the substrate from 40 sec after an initiation of the bias treatment to an end of the bias treatment is held in a range of 800° C.±60° C. There can be provided a method for producing a substrate for single crystal diamond growth, by which a single crystal diamond can be grown more certainly.

    Abstract translation: 公开了一种用于制造单晶金刚石生长用基板的方法,至少包括在单晶金刚石生长之前对基板进行预定处理以在其上形成金刚石核的偏压处理的步骤,其中直流放电是通过直流放电 在基板侧是阴极,并且其中在处理中,至少在偏置处理开始之后40秒至偏置处理结束之后,基板的温度保持在800℃的范围内 可以提供一种用于生产用于单晶金刚石生长的基底的方法,通过该方法可以更确定地生长单晶金刚石。

    Magnetic disk cartridge
    7.
    发明申请
    Magnetic disk cartridge 审中-公开
    磁盘盒

    公开(公告)号:US20060098342A1

    公开(公告)日:2006-05-11

    申请号:US11221731

    申请日:2005-09-09

    CPC classification number: G11B23/0321 G11B23/0308 G11B23/0316

    Abstract: A magnetic disk cartridge, which holds therein a magnetic disk with recording density and has a liner composed of polyethylene terephthalate fibers, is provided which achieves a good dust-removal effect by the liner without flawing the magnetic disk and without increasing the rotary torque of the magnetic disk. A magnetic layer of the magnetic disk is formed such that the magnetic layer contains diamond particles which have an average particle size satisfying a relationship “b−0.05≦a≦b+0.1” at 1% to 10% by weight with respect to the ferromagnetic material, where “a” represents the average particle size of the diamond particles in units of μm and “b” represents a thickness of the magnetic layer in units of μm. The fibers of the liner are selected from the fibers whose fiber diameter varies in its length direction.

    Abstract translation: 一种磁盘盒,其具有记录密度的磁盘并具有由聚对苯二甲酸乙二醇酯纤维组成的衬垫,其实现了衬垫的良好的除尘效果,而不会使磁盘发生瑕疵而不会增加旋转扭矩 磁盘。 形成磁盘的磁性层,使得磁性层含有平均粒径满足关系式“b-0.05 <= a <= b + 0.1”的金刚石颗粒,相对于 铁磁材料,其中“a”表示以单位为单位的金刚石颗粒的平均粒度,“b”表示磁性层以母体为单位的厚度。 衬垫的纤维选自其纤维直径在其长度方向上变化的纤维。

    Recording/reproducing method of magnetic disc
    8.
    发明申请
    Recording/reproducing method of magnetic disc 审中-公开
    磁盘的记录/再现方法

    公开(公告)号:US20050174674A1

    公开(公告)日:2005-08-11

    申请号:US11050767

    申请日:2005-02-07

    CPC classification number: G11B5/39 G11B5/02 G11B5/70678 G11B5/73 G11B19/28

    Abstract: A method comprising recording or reproducing a magnetic disc with a recording head or a reproducing head, the magnetic disc having a diameter of from 1.91 to 3.81 cm and comprising, in this order, a flexible support, a substantially nonmagnetic lower layer and a magnetic layer containing hexagonal ferrite magnetic powder and a binder, wherein relative speeds in all recording area of the magnetic disc are within a range of from 1.0 to 8.0 m/s when the recording or reproducing is conducted.

    Abstract translation: 一种包括用记录头或再现头记录或再现磁盘的方法,该磁盘的直径为1.91至3.81cm,并且依次包括柔性支撑件,基本上非磁性的下层和磁性层 包含六角铁氧体磁粉和粘合剂,其中当进行记录或再现时,磁盘的所有记录区域中的相对速度在1.0至8.0m / s的范围内。

    Recording medium and recording/reproducing apparatus
    9.
    发明申请
    Recording medium and recording/reproducing apparatus 审中-公开
    记录介质和记录/再现装置

    公开(公告)号:US20050064131A1

    公开(公告)日:2005-03-24

    申请号:US10943240

    申请日:2004-09-17

    Abstract: The present invention provides smooth and adequate recording/reproducing on a recording medium employing a biodegradable material as a substrate material. The present invention relates to storing on a recording medium, information, structure, or the like indicating that a substrate is formed of a biodegradable material. When the present invention is applied to CD, CD-R, and CD-RW, identification information indicating a substrate formed of a biodegradable material is included in a free area of TOC data in a lead-in area shown in FIG. 4. An optical disc apparatus reads the identification information to identify whether or not a disc loaded into the apparatus has a substrate of a biodegradable material. When the loaded disc has a substrate of a biodegradable material, the optical disc apparatus: measures a temperature inside a drive; stops a recording/reproducing operation on the disc when the temperature approaches a glass transition temperature of a substrate material; and ejects the disc to outside of the apparatus.

    Abstract translation: 本发明在使用可生物降解材料作为基材的记录介质上提供平滑和充分的记录/再现。 本发明涉及在记录介质上存储表示基材由可生物降解的材料形成的信息,结构等。 当将本发明应用于CD,CD-R和CD-RW时,指示由可生物降解材料形成的衬底的识别信息被包括在图1所示导入区的TOC数据的空闲区域中。 光盘装置读取识别信息以识别装载到该装置中的盘是否具有可生物降解材料的基底。 当装载的盘具有可生物降解材料的基底时,光盘装置:测量驱动器内部的温度; 当温度接近基板材料的玻璃化转变温度时,停止盘上的记录/再现操作; 并将盘弹出到设备外部。

    Method for producing diamond film
    10.
    发明申请
    Method for producing diamond film 审中-公开
    金刚石膜的制造方法

    公开(公告)号:US20050016445A1

    公开(公告)日:2005-01-27

    申请号:US10892375

    申请日:2004-07-16

    Inventor: Hitoshi Noguchi

    CPC classification number: C23C16/274 C23C16/278 G03F1/20 G03F1/22

    Abstract: The present invention is a method for producing a diamond film on a base material by a vapor phase reaction at least with introducing a raw material gas, wherein PO(OCH3)3 gas, P(OCH3)3 gas, or B(OC2H5)3 gas is added to the raw material gas as a source of phosphorus or boron to be doped, and a diamond film doped with phosphorus or boron is deposited on the base material by a vapor phase reaction utilizing the mixed raw material gas. Thereby, there can be provided a method enabling easy, inexpensive and uniform production of a diamond film showing low electric resistivity with good reproducibility and few problems concerning handling such as bad influence on human bodies and explosiveness during the doping process.

    Abstract translation: 本发明是至少通过引入原料气体,其中PO(OCH 3)3气体,P(OCH 3)3气体或B(OC 2 H 5)3)的气相反应在基材上制备金刚石膜的方法 将气体作为待掺杂的磷或硼的原料气体添加,并且通过利用混合原料气体的气相反应将掺杂有磷或硼的金刚石膜沉积在基材上。 因此,可以提供一种能够容易,廉价和均匀地制备显示低电阻率的金刚石膜的方法,具有良好的再现性和在诸如对人体的不良影响和在掺杂过程中的爆炸性的处理方面的少量问题。

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