发明授权
US06982140B2 Positive resist composition and method of forming resist pattern
有权
正型抗蚀剂组合物和形成抗蚀剂图案的方法
- 专利标题: Positive resist composition and method of forming resist pattern
- 专利标题(中): 正型抗蚀剂组合物和形成抗蚀剂图案的方法
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申请号: US10466172申请日: 2002-11-29
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公开(公告)号: US06982140B2公开(公告)日: 2006-01-03
- 发明人: Hideo Hada , Satoshi Fujimura , Jun Iwashita
- 申请人: Hideo Hada , Satoshi Fujimura , Jun Iwashita
- 申请人地址: JP Kawasaki
- 专利权人: Tokyo Ohka Kogyo., Ltd.
- 当前专利权人: Tokyo Ohka Kogyo., Ltd.
- 当前专利权人地址: JP Kawasaki
- 代理机构: Dechert LLP
- 代理商 John W. Ryan
- 优先权: JP2001-369340 20011203
- 国际申请: PCT/JP02/12538 WO 20021129
- 国际公布: WO03/048863 WO 20030612
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; G03F7/30
摘要:
There is provided a positive type resist composition formed by dissolving (A) a resin component with a unit derived from a (meth)acrylate ester in the principal chain, for which the solubility in alkali increases under the action of acid, and (B) an acid generator component which generates acid on exposure, in an organic solvent component (C), wherein the resin component (A) is a copolymer comprising (a1) a unit derived from a (meth)acrylate ester comprising an acid dissociable, dissolution inhibiting group containing a polycyclic group, (a2) a unit derived from a (meth)acrylate ester comprising a lactone containing monocyclic group or polycyclic group, (a3) a unit derived from a (meth)acrylate ester comprising a hydroxyl group containing polycyclic group, and (a4) a unit derived from a (meth)acrylate ester comprising a polycyclic group which is different from the unit (a1), the unit (a2) and the unit (a3). This composition provides a chemically amplified positive type resist composition which displays excellent resolution, enables the depth of focus range of an isolated resist pattern to be improved, and enables the proximity effect to be suppressed.
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