利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.028 秒)

    Positive photoresist composition and method of forming resist pattern
    2.
    发明申请
    Positive photoresist composition and method of forming resist pattern 有权
    正型光致抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US20060210914A1

    公开(公告)日：2006-09-21

    申请号：US10564510

    申请日：2004-07-13

    申请人： Yasuo Masuda ,  Toshiki Okui

    发明人： Yasuo Masuda ,  Toshiki Okui

    IPC分类号： G03C1/76 ,  G03C1/492

    CPC分类号： G03F7/0226 ,  C08G14/04 ,  G03F7/023

    摘要： There is provided a positive photoresist composition capable of forming a pattern with excellent resolution, excellent resistance to reflection off the substrate, and excellent perpendicularity. The positive photoresist composition comprises (A) an alkali-soluble novolak resin in which a portion of the hydrogen atoms of all the phenolic hydroxyl groups are substituted with 1,2-naphthoquinonediazidesulfonyl groups, and (B) a dissolution promoter represented by a general formula (b-1) and/or a general formula (b-11) shown below.

    摘要翻译： 提供了能够形成具有优异分辨率，优异的抗反射性的基板的极好的垂直性的正型光致抗蚀剂组合物。 正型光致抗蚀剂组合物包含（A）其中所有酚羟基的一部分氢原子被1,2-萘醌二叠氮基磺酰基取代的碱溶性酚醛清漆树脂，（B）由通式 （b-1）和/或下述通式（b-11）。

    Developer composition for resists and method for formation of resist pattern
    4.
    发明申请
    Developer composition for resists and method for formation of resist pattern 有权
    用于抗蚀剂的显影剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US20060127825A1

    公开(公告)日：2006-06-15

    申请号：US10560155

    申请日：2004-06-10

    申请人： Yasushi Washio ,  Koji Saito

    发明人： Yasushi Washio ,  Koji Saito

    IPC分类号： G03C5/26

    CPC分类号： G03F7/322

    摘要： To provide a developer composition for resists, capable of improving dimensional controllability of a resist pattern. The developer composition for resists comprises an organic quaternary ammonium base as a main component, said developer composition further comprising an anionic surfactant represented by the following general formula (I), and SO42−, the content of S42− being from 0.01 to 1% by mass. In the formula, at least one of R1 and R2 represents an alkyl or alkoxy group having 5 to 18 carbon atoms and the other one represents a hydrogen atom, or an alkyl or alkoxy group having 5 to 18 carbon atoms, and at least one of R3, R4 and R5 represents an ammonium sulfonate group or a sulfonic acid-substituted ammonium group and the others represent a hydrogen atom, an ammonium sulfonate group or a sulfonic acid-substituted ammonium group.

    摘要翻译： 提供能够提高抗蚀剂图案的尺寸可控性的抗蚀剂用显影剂组合物。 用于抗蚀剂的显影剂组合物包含有机季铵碱作为主要成分，所述显影剂组合物还包含由以下通式（I）表示的阴离子表面活性剂和SO 4 - / SUP>，其中S 2 的含量为0.01〜1质量％。 在该式中，R 1和R 2中的至少一个表示具有5至18个碳原子的烷基或烷氧基，另一个表示氢原子，或 具有5至18个碳原子的烷基或烷氧基，并且R 3，R 4和R 5中的至少一个表示磺酸铵基团 或磺酸取代的铵基，其余的表示氢原子，磺酸铵基或磺酸取代的铵基。

    Positive resist composition and method of forming resist pattern
    5.
    发明授权
    Positive resist composition and method of forming resist pattern 有权
    正型抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06982140B2

    公开(公告)日：2006-01-03

    申请号：US10466172

    申请日：2002-11-29

    申请人： Hideo Hada ,  Satoshi Fujimura ,  Jun Iwashita

    发明人： Hideo Hada ,  Satoshi Fujimura ,  Jun Iwashita

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： There is provided a positive type resist composition formed by dissolving (A) a resin component with a unit derived from a (meth)acrylate ester in the principal chain, for which the solubility in alkali increases under the action of acid, and (B) an acid generator component which generates acid on exposure, in an organic solvent component (C), wherein the resin component (A) is a copolymer comprising (a1) a unit derived from a (meth)acrylate ester comprising an acid dissociable, dissolution inhibiting group containing a polycyclic group, (a2) a unit derived from a (meth)acrylate ester comprising a lactone containing monocyclic group or polycyclic group, (a3) a unit derived from a (meth)acrylate ester comprising a hydroxyl group containing polycyclic group, and (a4) a unit derived from a (meth)acrylate ester comprising a polycyclic group which is different from the unit (a1), the unit (a2) and the unit (a3). This composition provides a chemically amplified positive type resist composition which displays excellent resolution, enables the depth of focus range of an isolated resist pattern to be improved, and enables the proximity effect to be suppressed.

    摘要翻译： 提供一种正型抗蚀剂组合物，其通过将（A）树脂组分与主链中衍生自（甲基）丙烯酸酯的单元溶解，其中在碱的作用下碱的溶解度增加，（B） 一种在有机溶剂组分（C）中暴露时产生酸的酸产生剂组分，其中树脂组分（A）是共聚物，其包含（a1）衍生自（甲基）丙烯酸酯的单元，其包含酸解离，溶解抑制 含有多环基团的基团，（a2）由含有内酯单体或多环基团的（甲基）丙烯酸酯衍生的单元，（a3）由含有羟基的多环基团的（甲基）丙烯酸酯衍生的单元， 和（a4）衍生自包含与单元（a1），单元（a2）和单元（a3）不同的多环基团的（甲基）丙烯酸酯的单元。 该组合物提供显示出优异的分辨率的化学放大正型抗蚀剂组合物，能够提高隔离抗蚀剂图案的聚焦范围的深度，并且能够抑制邻近效应。

    RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
    6.
    发明申请
    RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
    电阻组合和电阻形成方法

    公开(公告)号：US20090258313A1

    公开(公告)日：2009-10-15

    申请号：US11996044

    申请日：2006-05-18

    申请人： Shoichi Fujita ,  Kazuyuki Nitta ,  Tomoharu Takahashi ,  Hirokazu Ozaki

    发明人： Shoichi Fujita ,  Kazuyuki Nitta ,  Tomoharu Takahashi ,  Hirokazu Ozaki

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0397 ,  G03F7/0048

    摘要： The present invention provides a resist composition prepared by dissolving components in an organic solvent containing ethyl lactate, which suppresses deterioration of sensitivity with time and also has required lithographic characteristics, and a method for forming a resist pattern. The resist composition is prepared by dissolving a resin component (A) which exhibits changeable alkali solubility under an action of an acid, an acid generator component (B) which generates an acid upon exposure, an amine (D) and acetic acid in an organic solvent (S) containing ethyl lactate.

    摘要翻译： 本发明提供了通过将成分溶解在含有乳酸乙酯的有机溶剂中而制备的抗蚀剂组合物，其抑制了敏感性随时间的劣化，并且还具有所需的光刻特性，以及形成抗蚀剂图案的方法。 抗蚀剂组合物通过在酸的作用下溶解具有可变碱性溶解性的树脂组分（A），暴露时产生酸的酸产生剂组分（B），有机酸中的胺（D）和乙酸 含有乳酸乙酯的溶剂（S）。