发明授权
- 专利标题： Ferroelectric capacitor hydrogen barriers and methods for fabricating the same
- 专利标题（中）： 铁电电容器氢屏障及其制造方法
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申请号： US10803445申请日： 2004-03-18
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公开(公告)号： US06982448B2公开(公告)日： 2006-01-03
- 发明人: K. R. Udayakumar , Theodore S. Moise , Scott R. Summerfelt
- 申请人： K. R. Udayakumar , Theodore S. Moise , Scott R. Summerfelt
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94
摘要：
Hydrogen barriers and fabrication methods are provided for protecting ferroelectric capacitors (CFE) from hydrogen diffusion in semiconductor devices (102), wherein nitrided aluminum oxide (N—AlOx) is formed over a ferroelectric capacitor (CFE), and one or more silicon nitride layers (112, 117) are formed over the nitrided aluminum oxide (N—AlOx). Hydrogen barriers are also provided in which an aluminum oxide (AlOx, N—AlOx) is formed over the ferroelectric capacitors (CFE), with two or more silicon nitride layers (112, 117) formed over the aluminum oxide (AlOx, N—AlOx), wherein the second silicon nitride layer (112) comprises a low silicon-hydrogen SiN material.