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发明授权
US06982453B2 Semicondutor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof 失效
具有铁电电容器和氢阻挡膜的半导体器件及其制造方法

Semicondutor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof
摘要：
A semiconductor device having a semiconductor substrate; an insulating film formed on said semiconductor substrate; a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on the insulating film; a first hydrogen barrier film; a first inter-layer insulating film covering said ferroelectric capacitor; and a second inter-layer insulating film stacked on the first inter-layer insulating film, the first hydrogen barrier film being interposed between the first and second interlayer insulating films is proposed.
摘要（中）：

一种具有半导体衬底的半导体器件; 形成在所述半导体衬底上的绝缘膜; 具有下电极，强电介质膜和上电极的铁电电容器，其顺序层叠在绝缘膜上; 第一氢阻挡膜; 覆盖所述铁电电容器的第一层间绝缘膜; 以及叠层在第一层间绝缘膜上的第二层间绝缘膜，提出介于第一和第二层间绝缘膜之间的第一氢阻挡膜。

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