发明授权
- 专利标题： Semiconductor device having bump electrode and support area
- 专利标题（中）： 具有凸起电极和支撑区域的半导体器件
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申请号： US10425664申请日： 2003-04-30
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公开(公告)号： US06982496B2公开(公告)日： 2006-01-03
- 发明人: Hirofumi Abe , Hiroyuki Ban
- 申请人： Hirofumi Abe , Hiroyuki Ban
- 申请人地址： JP Kariya
- 专利权人： Denso Corporation
- 当前专利权人： Denso Corporation
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2002-142974 20020517
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/544
摘要：
A semiconductor device includes a substrate, a plurality of bump electrodes disposed on the substrate, and a support area for supporting the substrate in case of carrying the substrate. The support area is disposed on a surface of the substrate, on which the bump electrode is disposed, and is disposed at a predetermined position, which is dotted on the surface of the substrate. In this device, the support area is sufficiently small, and the number of the bump electrodes can increase. Moreover, degree of freedom in a configuration of the support area increases.
公开/授权文献
- US20030214034A1 Semiconductor device having bump electrode 公开/授权日：2003-11-20
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