Invention Grant
US06983476B2 Rewritable optical recording medium with ZnO near-field optical interaction layer
失效
具有ZnO近场光学相互作用层的可重写光记录介质
- Patent Title: Rewritable optical recording medium with ZnO near-field optical interaction layer
- Patent Title (中): 具有ZnO近场光学相互作用层的可重写光记录介质
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Application No.: US10337775Application Date: 2003-01-08
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Publication No.: US06983476B2Publication Date: 2006-01-03
- Inventor: Din-Ping Tsai , Yu-Hsuan Lin , Wei-Chih Lin , Hsun-Hao Chang
- Applicant: Din-Ping Tsai , Yu-Hsuan Lin , Wei-Chih Lin , Hsun-Hao Chang
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Troxell Law Office, PLLC
- Priority: TW91207654U 20020527
- Main IPC: G11B7/24
- IPC: G11B7/24

Abstract:
This invention is a rewritable near-field optical medium using a zinc oxide nano-structured thin film as the localized near-field interaction layer. This rewritable near-field optical medium is a multilayered body at least comprising: (a) a substrate of transparent material; (b) a first protective and spacer layer formed on one surface of the substrate, which is made of transparent dielectric material; (c) a zinc oxide nano-structured thin film which is capable of causing localized near-field optical interactions; (d) a second protective and spacer layer formed on the localized near-field optical interaction layer, which is also made of transparent dielectric material; (e) a rewritable recording layer; (f) a third protective and spacer layer formed on the rewritable recording layer, which is also made of transparent dielectric material. Ultrahigh density near-field optical recording can be achieved by the localized near-field optical interactions of the zinc oxide nanostructured thin film that is in the near-field region of the rewritable recording layer.
Public/Granted literature
- US20030218969A1 Rewritable optical recording medium with ZnO near-field optical interaction layer Public/Granted day:2003-11-27
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