Invention Grant
- Patent Title: Reference generator for multilevel nonlinear resistivity memory storage elements
- Patent Title (中): 多电平非线性电阻率存储元件的参考发生器
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Application No.: US10689421Application Date: 2003-10-20
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Publication No.: US06985383B2Publication Date: 2006-01-10
- Inventor: Denny D. Tang , Wen-Chin Lin
- Applicant: Denny D. Tang , Wen-Chin Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G11C11/14
- IPC: G11C11/14 ; G11C11/15 ; G11C7/14

Abstract:
A multilevel reference generator has a plurality of nonlinear standard resistive elements where each resistive element is biased at a constant level to develop a resultant level. The multilevel reference generator has a plurality of mirror sources. Each mirror source is in communication with the one of the plurality of resistive elements such that each mirror source receives the resultant level from the one standard resistive element and provides a mirrored replication of the resultant level. The multilevel reference generator has a plurality of reference level combining circuits. The reference level combining circuit includes a resultant level summing circuit that additively combines the first and second mirrored replication level and a level scaling circuit to create a scaling of the combined first and second mirrored replication levels to create the reference level.
Public/Granted literature
- US20050083747A1 Reference generator for multilevel nonlinear resistivity memory storage elements Public/Granted day:2005-04-21
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