发明授权
- 专利标题： Trench MOSFET with increased channel density
- 专利标题（中）： 沟道MOSFET增加通道密度
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申请号： US10950754申请日： 2004-09-27
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公开(公告)号： US06987040B2公开(公告)日： 2006-01-17
- 发明人: Prasad Venkatraman
- 申请人： Prasad Venkatraman
- 申请人地址： US AZ Phoenix
- 专利权人： Semiconductor Components Industries, L.L.C.
- 当前专利权人： Semiconductor Components Industries, L.L.C.
- 当前专利权人地址： US AZ Phoenix
- 代理商 Kevin B. Jackson
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/8238 ; H01L21/336
摘要：
A MOSFET device (50) has a trench (60) extending from a major surface (56) of the device (50). Within the trench (60), a gate structure (62) is formed where the top surface (64) is below the major surface (56). Source regions (66, 68) are formed along a vertical wall (84) inside of the trench (60). The source regions (66, 68) have a horizontal component along the major surface (56) and a vertical component extending the vertical wall (84). The majority of the source regions (66, 68) are formed along the vertical wall (84) within the trench (60). A typical aspect ratio of the vertical length of the source regions (66, 68) to the horizontal width is greater than 3:1. An Inter-layer dielectric (ILD) layer (74) is formed on the gate structure (62) within the trench (60) below the major surface (56). A metal electrode layer (82) is formed above the major surface (56) where a portion is formed inside the trench (60) making source contact to the source regions (66, 68) inside the trench (60) along the vertical wall (84) of the trench (60).
公开/授权文献
- US20050035402A1 Trench MOSFET with increased channel density 公开/授权日：2005-02-17
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