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US06987695B2 Writing data to nonvolatile memory 有权
将数据写入非易失性存储器

Writing data to nonvolatile memory
Abstract:
In some embodiments, of the present invention, data are written to a plurality of nonvolatile memory cells (Q0, Q15) as follows. A data writing signal is supplied to one of the memory cells (Q0) but not to both of the memory cells. Then data writing signals are supplied to both of the memory cells simultaneously.
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