Invention Grant
- Patent Title: Writing data to nonvolatile memory
- Patent Title (中): 将数据写入非易失性存储器
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Application No.: US10397882Application Date: 2003-03-25
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Publication No.: US06987695B2Publication Date: 2006-01-17
- Inventor: Jongmin Park , Li-Chun Li
- Applicant: Jongmin Park , Li-Chun Li
- Applicant Address: TW Hsin Chu
- Assignee: ProMOS Technologies Inc.
- Current Assignee: ProMOS Technologies Inc.
- Current Assignee Address: TW Hsin Chu
- Agency: MacPherson Kwok Chen & Heid LLP
- Agent Michael Shenker
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06

Abstract:
In some embodiments, of the present invention, data are written to a plurality of nonvolatile memory cells (Q0, Q15) as follows. A data writing signal is supplied to one of the memory cells (Q0) but not to both of the memory cells. Then data writing signals are supplied to both of the memory cells simultaneously.
Public/Granted literature
- US20040190344A1 Writing data to nonvolatile memory Public/Granted day:2004-09-30
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