Invention Grant
- Patent Title: Forming a contact in a thin-film device
- Patent Title (中): 在薄膜装置中形成接触
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Application No.: US10770083Application Date: 2004-01-31
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Publication No.: US06989327B2Publication Date: 2006-01-24
- Inventor: Manish Sharma , Thomas C. Anthony , Heon Lee
- Applicant: Manish Sharma , Thomas C. Anthony , Heon Lee
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.
Public/Granted literature
- US20050170628A1 Forming a contact in a thin-film device Public/Granted day:2005-08-04
Information query
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