公开(公告)号：US06989327B2

公开(公告)日：2006-01-24

申请号：US10770083

申请日：2004-01-31

申请人： Manish Sharma ,  Thomas C. Anthony ,  Heon Lee

发明人： Manish Sharma ,  Thomas C. Anthony ,  Heon Lee

IPC分类号： H01L21/44

CPC分类号： H01L21/0331 ,  H01L21/0272 ,  H01L21/31144 ,  H01L43/12 ,  Y10S438/951

摘要： An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.

摘要翻译： 本发明的一个方面是在薄膜器件中形成接触的方法。 该方法包括形成剥离模板，将至少一种材料沉积通过剥离模板，去除剥离模板的一部分，与剥离模板的剩余部分形成重新进入的模型并且沉积导体材料与所述脱模模板接触。 至少一个材料在入口轮廓。

公开(公告)号：US07522446B2

公开(公告)日：2009-04-21

申请号：US10698501

申请日：2003-10-31

申请人： Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

发明人： Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： H01L27/222 ,  G11C11/16 ,  G11C11/1675

摘要： A method for making magnetic random access memories (MRAM) which reduces heat conduction from memory cells in an MRAM array. The method uses grid of bit and word lines for selectively accessing data in the array of magnetic memory cells. The grid has a plurality of thermally and electrically resistive portions which provide connections to the magnetic memory cells. The resistive portions increase the thermal resistance for heat generated by each memory cell and during operation provide localized heating of active memory cells to ease cell state switching.

摘要翻译： 一种用于制造磁性随机存取存储器（MRAM）的方法，其减少MRAM阵列中的存储器单元的热传导。 该方法使用位和字线的网格来选择性地访问磁存储单元阵列中的数据。 栅极具有多个电阻和电阻部分，其提供到磁存储器单元的连接。 电阻部分增加了由每个存储单元产生的热的热阻，并且在操作期间提供有源存储器单元的局部加热以便于单元状态切换。

公开(公告)号：US06984530B2

公开(公告)日：2006-01-10

申请号：US10811553

申请日：2004-03-29

申请人： Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

发明人： Heon Lee ,  Thomas C. Anthony ,  Manish Sharma

IPC分类号： H01L21/00

CPC分类号： H01L27/222 ,  H01L43/12

摘要： A method of fabricating a magnetic random access memory (MRAM) device is disclosed. The method reduces the number of mask steps and processing steps required to fabricate the MRAM device. A first conductive layer and a sense layer are patterned in a first mask step. A subsequent etching step forms a bottom electrode and a sense layer that are continuous with each other in a first direction. A second conductive layer and a plurality of layers of material required to form a magnetic tunnel junction stack are patterned in a second mask step. A subsequent etching step forms a top electrode and a plurality of layers of material that are continuous with each other in a second direction, and a plurality of discrete sense layers. The discrete sense layers and the plurality of layers of material define a plurality of magnetic tunnel junction devices.

摘要翻译： 公开了制造磁随机存取存储器（MRAM）装置的方法。 该方法减少了制造MRAM设备所需的掩模步骤和处理步骤的数量。 第一导电层和感测层在第一掩模步骤中被图案化。 随后的蚀刻步骤形成在第一方向上彼此连续的底部电极和感测层。 在第二掩模步骤中图案化形成磁性隧道结叠层所需的第二导电层和多层材料。 随后的蚀刻步骤形成在第二方向上彼此连续的顶部电极和多个材料层，以及多个离散感测层。 离散感测层和多层材料限定了多个磁性隧道结装置。

公开(公告)号：US07391641B2

公开(公告)日：2008-06-24

申请号：US11285991

申请日：2005-11-23

申请人： Manish Sharma ,  Lung Tran ,  Thomas C. Anthony

发明人： Manish Sharma ,  Lung Tran ,  Thomas C. Anthony

IPC分类号： G11C11/00

CPC分类号： G11C11/15 ,  H01L27/222 ,  H01L43/08

摘要： An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.

摘要翻译： 包括多个存储器单元的示例性存储器阵列，每个存储器单元包括第一铁磁层，通过非磁性分离层与第一铁磁层隔开的第二铁磁层，并且通过非磁性分离层磁耦合到第一铁磁层，并通过 来自第一铁磁层的去磁场，第二铁磁层上方的间隔层，以及间隔层上方的基准层。 第一铁磁层，非磁性分离层和第二铁磁层组合起来作为存储单元的数据层。

公开(公告)号：US06473337B1

公开(公告)日：2002-10-29

申请号：US09983404

申请日：2001-10-24

申请人： Lung T. Tran ,  Manish Sharma ,  Thomas C. Anthony

发明人： Lung T. Tran ,  Manish Sharma ,  Thomas C. Anthony

IPC分类号： G11C1115

CPC分类号： H01L27/222 ,  G11C11/15

摘要： A memory device includes dual tunnel junction memory cells having a magnetic tunnel junction in series with a tunnel junction. The magnetic tunnel junction can be changed from a first resistance state to a second resistance state during a write operation. The magnetic tunnel junction can have a differing resistance-voltage characteristic than the tunnel junction, and the differing resistance-voltage characteristics allow the magnetic tunnel junction to be blown without blowing the tunnel junction during a write operation. The change in resistance state of the magnetic tunnel junction changes the resistance of the selected memory cell, which is detectable during a read operation.

摘要翻译： 存储器件包括双隧道结存储器单元，其具有与隧道结串联的磁性隧道结。 在写入操作期间，磁性隧道结可以从第一电阻状态改变到第二电阻状态。 磁性隧道结可以具有与隧道结不同的电阻 - 电压特性，并且不同的电阻 - 电压特性允许磁性隧道结在写入操作期间不会吹动隧道结而被吹动。 磁性隧道结的电阻状态的改变改变了所选择的存储单元的电阻，这在读取操作期间是可检测的。

公开(公告)号：US06404674B1

公开(公告)日：2002-06-11

申请号：US09825461

申请日：2001-04-02

申请人： Thomas C. Anthony ,  Manish Sharma

发明人： Thomas C. Anthony ,  Manish Sharma

IPC分类号： G11C1115

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/222

摘要： A magnetic memory cell having read-write conductor that is wholly clad with a high magnetic permeability soft magnetic material for a pinned-on-the-fly soft ferromagnetic reference layer is disclosed. The magnetic memory cell includes a ferromagnetic data layer, an intermediate layer formed on the ferromagnetic data layer, and a soft ferromagnetic reference layer having a non-pinned orientation of magnetization formed on the intermediate layer. The soft ferromagnetic reference layer includes a read-write conductor and a ferromagnetic cladding that completely surrounds the read-write conductor to form a cladded read-write conductor. During a read operation, a read current flowing through the read-write conductor generates a read magnetic field that does not saturate the ferromagnetic cladding. During a write operation, a write current flowing through the read-write conductor generates a write magnetic field that saturates the ferromagnetic cladding and extends to the ferromagnetic data layer.

摘要翻译： 公开了一种具有读写导体的磁存储单元，该导体全部用高导磁率的软磁材料包覆在一个固定的软铁磁参考层上。 磁存储单元包括铁磁数据层，形成在铁磁数据层上的中间层和在中间层上形成的具有非磁化取向的磁化铁磁参考层。 软铁磁参考层包括完全包围读写导体以形成包层读写导体的读写导体和铁磁包层。 在读操作期间，流经读写导体的读电流产生不使铁磁包层饱和的读磁场。 在写入操作期间，流过读写导体的写入电流产生使铁磁包层饱和并延伸到铁磁数据层的写入磁场。

公开(公告)号：US06794695B2

公开(公告)日：2004-09-21

申请号：US10135241

申请日：2002-04-29

申请人： Manish Sharma ,  Thomas C. Anthony ,  Manoj Bhattacharyya

发明人： Manish Sharma ,  Thomas C. Anthony ,  Manoj Bhattacharyya

IPC分类号： H01L2976

CPC分类号： G11C11/16 ,  G11C11/161

摘要： An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.

摘要翻译： 公开了一种诸如磁存储器件的电磁器件，其包括用于在产生磁阻响应中的偏移的边界处构造，衰减或消除杂散场的装置。 该装置包括导电第一层，并且衰减装置包括电磁耦合到第一层的吸收层，以在电操作期间衰减第一层边界处的杂散边界磁阻偏移。

公开(公告)号：US06577529B1

公开(公告)日：2003-06-10

申请号：US10235011

申请日：2002-09-03

申请人： Manish Sharma ,  Thomas C. Anthony ,  Lung T. Tran

发明人： Manish Sharma ,  Thomas C. Anthony ,  Lung T. Tran

IPC分类号： G11C1100

CPC分类号： G11C11/15 ,  G11C11/5607 ,  G11C2213/71

摘要： A memory cell includes a conductor clad with ferromagnetic material; first and second spacer layers on opposite sides of the clad conductor; a first data layer on the first spacer layer; and a second data layer on the second spacer layer.

摘要翻译： 存储单元包括用铁磁材料包覆的导体; 在包层导体的相对侧上的第一和第二间隔层; 第一间隔层上的第一数据层; 以及第二间隔层上的第二数据层。

公开(公告)号：US06891212B2

公开(公告)日：2005-05-10

申请号：US10697191

申请日：2003-10-30

申请人： Manish Sharma ,  Thomas C. Anthony ,  Lung Tran

发明人： Manish Sharma ,  Thomas C. Anthony ,  Lung Tran

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L29/76

CPC分类号： G11C11/16

摘要： A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.

摘要翻译： 磁存储器件包括第一和第二铁磁层。 每个铁磁层具有可以在两个方向中的任一方向上取向的磁化。 第一铁磁层具有比第二铁磁层更高的矫顽力。 磁存储器件还包括用于与第二铁磁层形成闭合磁通路径的结构。

公开(公告)号：US06693825B1

公开(公告)日：2004-02-17

申请号：US10349685

申请日：2003-01-23

申请人： Manish Sharma ,  Thomas C. Anthony ,  Lung T. Tran

发明人： Manish Sharma ,  Thomas C. Anthony ,  Lung T. Tran

IPC分类号： G11C1100

CPC分类号： G11C11/15 ,  G11C11/5607 ,  G11C2213/71

摘要： A memory cell includes a conductor clad with ferromagnetic material; first and second spacer layers on opposite sides of the clad conductor; a first data layer on the first spacer layer; and a second data layer on the second spacer layer.

摘要翻译： 存储单元包括用铁磁材料包覆的导体; 在包层导体的相对侧上的第一和第二间隔层; 第一间隔层上的第一数据层; 以及第二间隔层上的第二数据层。