Invention Grant
- Patent Title: Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit
- Patent Title (中): 应变通道隔离栅场效应晶体管，制造相同的集成电路的过程
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Application No.: US10405075Application Date: 2003-03-31
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Publication No.: US06989570B2Publication Date: 2006-01-24
- Inventor: Thomas Skotnicki , Daniel Bensahel
- Applicant: Thomas Skotnicki , Daniel Bensahel
- Applicant Address: FR
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR
- Agency: Jenkens & Gilchrist, PC
- Priority: FR0204165 20020403
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A transistor is located on a base layer 1 resting on a semiconductor substrate SB and formed from a relaxed silicon-germanium layer, and includes, under the isolated gate 7, a first strained silicon layer 2 resting on the base layer 1, surmounted by a buried insulating layer 10, surmounted by a second strained silicon layer 4 extending between the source S and drain D regions.
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