Invention Grant
- Patent Title: Inductor Q value improvement
- Patent Title (中): 电感Q值改善
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Application No.: US10632456Application Date: 2003-07-31
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Publication No.: US06989578B2Publication Date: 2006-01-24
- Inventor: Tzu-Jin Yeh , Hsien-Chang Wu , Ming-Ta Yang , Yu-Tai Chia
- Applicant: Tzu-Jin Yeh , Hsien-Chang Wu , Ming-Ta Yang , Yu-Tai Chia
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L29/41
- IPC: H01L29/41

Abstract:
An inductor in an integrated circuit comprises a conductive trace disposed over an insulating layer which overlies a semiconductor substrate of a first conductivity type and at least two deep wells of opposite conductivity type in the substrate underneath the track. In another embodiment, an inductor in an integrated circuit comprises a conductive trace disposed over an insulating layer which overlies a semiconductor substrate of a first conductivity type; a shallow trench isolation region formed in the substrate underneath the trace; and at least two deep wells of opposite conductivity type in the substrate underneath the shallow trench isolation region. The present invention also includes methods of manufacturing the aforementioned inductors.
Public/Granted literature
- US20050023639A1 Inductor Q value improvement Public/Granted day:2005-02-03
Information query
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