发明授权
- 专利标题： Manufacturing method of an electron emitting apparatus
- 专利标题（中）： 电子发射装置的制造方法
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申请号： US10475586申请日： 2002-04-09
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公开(公告)号： US06991949B2公开(公告)日： 2006-01-31
- 发明人: Masakazu Muroyama , Takao Yagi , Kouji Inoue , Ichiro Saito
- 申请人： Masakazu Muroyama , Takao Yagi , Kouji Inoue , Ichiro Saito
- 申请人地址： JP
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP
- 代理机构： Rader, Fishman & Grauer PLLC
- 代理商 Ronald P. Kananen
- 优先权： JP2001-127361 20010425; JP2002-83898 20020325
- 国际申请： PCT/JP02/03528 WO 20020409
- 国际公布： WO02/091417 WO 20021114
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A cold cathode field emission device comprising a cathode electrode 11 formed on a supporting member 10, a gate electrode 13 which is formed above the cathode electrode 11 and has an opening portion 14, and an electron emitting portion 15 formed on a surface of a portion of the cathode electrode 11 which portion is positioned in a bottom portion of the opening portion 14, said electron emitting portion 15 comprising a carbon-group-material layer 23, and said carbon-group-material layer 23 being a layer formed from a hydrocarbon gas and a fluorine-containing hydrocarbon gas.