发明授权
- 专利标题： Gate material for semiconductor device fabrication
- 专利标题（中）： 用于半导体器件制造的栅极材料
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申请号： US10691007申请日： 2003-10-22
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公开(公告)号： US06991972B2公开(公告)日： 2006-01-31
- 发明人: Anthony J. Lochtefeld , Dimitri Antoniadis , Matthew T. Currie
- 申请人： Anthony J. Lochtefeld , Dimitri Antoniadis , Matthew T. Currie
- 申请人地址： US NH Salem
- 专利权人： AmberWave Systems Corporation
- 当前专利权人： AmberWave Systems Corporation
- 当前专利权人地址： US NH Salem
- 代理机构： Goodwin Procter LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L27/01
摘要：
In forming an electronic device, a semiconductor layer is pre-doped and a dopant distribution anneal is performed prior to gate definition. Alternatively, the gate is formed from a metal. Subsequently formed shallow sources and drains, therefore, are not affected by the gate annealing step.
公开/授权文献
- US20040137685A1 Gate material for semiconductor device fabrication 公开/授权日：2004-07-15
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